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박용섭,Byungyou HONG,Hyung-Jin KIM 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.3
Thin lms of hydrogenated amorphous carbon (a-C : H) generally combine high wear resistance with low friction coecient. In this study, hydrogenated amorphous carbon (a-C : H) lms are deposited on silicon with a Close Field Unbalanced Magnetron (CFUBM) sputtering system of high deposition rate. The experimental data are obtained on the deposition rate and tribological properties of a-C : H lms by using DC bias voltage. The lms are analyzed by Raman spectroscopy, FT-IR (Fourier Transform IR), and AFM (Atomic Force Microscopy). The tribological properties are investigated by hardness and friction coecient measurements. Relatively higher hardness and lower surface roughness are characteristics of the lms prepared by using DC bias voltage.
Cho, Chung-Woo,Hong, Byungyou,Lee, Young-Ze Elsevier 2005 Wear: An international journal on the science and Vol.259 No.1
<P><B>Abstract</B></P><P>Diamond-like carbon (DLC) films were prepared by microwave plasma-enhanced chemical vapor deposition (MW PECVD) and by radio frequency plasma-enhanced chemical vapor deposition (RF PECVD) method. In case of the DLC films deposited by the MW PECVD, a negative DC bias (−375 to −550V) was applied to enhance the adhesion between the film and a Si (silicon) substrate. The Raman spectroscopy suggested the DLC films were amorphous. AFM images show that the surface roughness of the films decreases with increasing negative DC bias voltage. In case of the DLC films deposited by the RF PECVD, AFM images show that the surface roughness of the DLC films decreases with increasing the RF power (25–200W). In this study, the wear life of the DLC films deposited by both deposition methods was more affected by surface roughness and coating thickness than by structural details revealed by the Raman works.</P>
Lee, Sung Uk,Choi, Won Seok,Hong, Byungyou Royal Swedish Academy of Sciences 2007 Physica scripta Vol.2007 No.t129
<P>Transparent conducting Sb-doped SnO<SUB>2</SUB> (antimony-doped tin oxide: ATO) films were prepared on Corning glass substrate by dc magnetron sputtering using SnO<SUB>2</SUB> mixed with 6 wt.% of Sb at various substrate temperatures of 100–600 ?C and dc powers of 100–200 W. All ATO films were deposited with a thickness of 300 nm. X-ray defractometer (XRD) measurements showed the ATO films to be crystallized with strong (101) orientation as substrate temperature increases over 300 ?C. Grain size was calculated from the XRD spectra using the Scherrer equation. The ATO film in this work had a resistivity of order 10<SUP>− 3</SUP> and carrier concentration of order 10<SUP>20</SUP>.</P>
Kim, In Jun,Choi, Won Seok,Hong, Byungyou American Scientific Publishers 2016 Journal of nanoscience and nanotechnology Vol.16 No.5
<P>The optical and electrical properties of silicon-incorporated hydrogenated amorphous carbon (a-C:H:Si) films deposited via the radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) method using a mixture of CH4, H-2, and SiH4 were observed. The silane gas whose ranged from 0 to 25 vol.% [SiH4/(SiH4+ CH4)] was fed into the reactor while the other deposition parameters were kept constant. The basic properties of these films were investigated via Raman spectroscopy, UV-visible spectrometry, I-V measurement, and surface profiling. The experiment results showed that the film thickness increased from 300 nm to 800 nm for the same deposition time as the silane gas increased. The Raman spectrum obtained from the silicon-incorporated a-C:H films suggested that the film property changed from graphitic-like to more diamond-like. As the silane gas increased, the optical gap, E-04, slightly increased from 1.98 eV to 2.62 eV. It was shown that the Si atoms incorporated into the a-C:H films reduced the size of the sp(2) clusters. As for the I-V characteristics, the Si-incorporated a-C:H films had a lower leakage current than the a-C:H films without Si.</P>