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        Influence of a Strong Electromagnetic Wave (Laser Radiation) on the Hall Effect in Quantum Wells with a Parabolic Potential

        Nguyen Quang Bau,Bui Dinh Hoi 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.60 No.1

        Based on the quantum kinetic equation for electrons, we theoretically study the influence of an electromagnetic wave (EMW) on the Hall effect in a quantum well (QW) with a parabolic potential V (z) = m!zz2/2 (where m and !z are the effective mass of electron and the confinement frequency of QW, respectively) subjected to a crossed dc electric field E~1 = (0, 0,E1) and magnetic field ~B = (0,B, 0) in the presence of a strong EMW characterized by electric field ~E = (E0 sin t, 0, 0)(where E0 and are the amplitude and the frequency of EMW, respectively). We obtain analytic expressions for the components zz and xz of the Hall conductivity as well as a Hall coefficient with a dependence on B, E1, E0, , temperature T of the system and the characteristic parameters of QW. The results are numerically evaluated and graphed for a specific quantum well, GaAs/AlGaAs,to show clearly the dependence of the Hall conductivity and the Hall coefficient on above parameters. The influence of the EMW is interpreted by using the dependences of the Hall conductivity and the Hall coefficient on the amplitude E0 and the frequency of EMW and by using the dependences on the magnetic field B and the dc electric field E1 as in the ordinary Hall effect.

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        Calculation of the Nonlinear Absorption Coefficient of an Intense Electromagnetic Wave Caused by Confined Electrons in Doped Semiconductor Superlattices

        Tran Cong Phong,Vo Thanh Lam,Bui Dinh Hoi 한국물리학회 2010 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.57 No.5

        General analytic expressions for the absorption coefficient (ACF) of an intense electromagnetic wave (IEW) caused by confined electrons in doped semiconductor superlattices (DSSL) are obtained by using the quantum kinetic equation (QKE) for electrons in the case of electron-optical phonon scattering. A second-order multiphoton process is included in the result. The dependence of the ACF on the amplitude E0 and the photon energy hΩof an IEW, the plasma frequency ωp and the temperature T for a specific DSSL of n-GaAs/p-GaAs is achieved by using a numerical method. The computational results show that the dependence of ACF on the photon energy can be applied to optically detect the electric subbands in a DSSL.

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