http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Self-Conditioning을 이용한 고정입자패드의 텅스텐 CMP
박범영(Boumyoung Park),김호윤(Hoyoun Kim),서헌덕(Heondeok Seo),정해도(Haedo Jeong) 대한기계학회 2003 대한기계학회 춘추학술대회 Vol.2003 No.4
The chemical mechanical polishing(CMP) is necessarily applied to manufacturing the dielectric layer<br/> and metal line in the semiconductor device. The conditioning of polishing pad in CMP process<br/> additionally operates for maintaining the removal rate, within wafer non-uniformity, and wafer to wafer<br/> non-uniformity. But the fixed abrasive pad(FAP) using the hydrophilic polymer with abrasive that has<br/> the swelling characteristic by water owns the self-conditioning advantage as compared with the general<br/> CMP. FAP also takes advantage of planarity, resulting from decreasing pattern selectivity and defects<br/> such as dishing due to the reduction of abrasive concentration. This paper introduces the manufacturing<br/> technique of FAP. And the tungsten CMP using FAP achieved the good conclusion in point of the<br/> removal rate, non-uniformity, surface roughness, material selectivity, micro-scratch free contemporary<br/> with the pad life-time.
The effect of mixed abrasive slurry on CMP of 6H-SiC substrates
Hojun Lee,Boumyoung Park,Sukhoon Jeong,Sukbae Joo,정해도 한양대학교 세라믹연구소 2009 Journal of Ceramic Processing Research Vol.10 No.3
Silicon Carbide (SiC) is a wide band gap semiconductor, being developed for high temperature, high power, and high frequency device applications. Many researchers have studied SiC polishing for the manufacturing of SiC and semiconductor substrates. However, these researchers have faced difficulties with a wafer preparation prior to epitaxial growth due to its hardness and remarkable chemical stability. A smooth and defect-free substrate surface is important to obtain good epitaxial layers. Therefore, a hybrid process, chemical mechanical polishing (CMP) has been proposed as a solution for preparing an epi-ready surface. During the experiments, the material removal rate (MRR) was investigated to learn how long the CMP process continues to remove a damaged layer by mechanical polishing using 100 nm diamond. Furthermore, the dependency of mechanical factors, such as pressure, velocity, and abrasive concentration, were researched using a single abrasive slurry (SAS). The experiments especially focused on the epi-ready surface with a mixed abrasive slurry (MAS). The addition of nanometre sized diamond in the MAS provided a strong synergy between mechanical and chemical effects. Through the experiments, a chemical effect (KOH based) was essential, and the atomic-bit mechanical removal was found to be efficient to remove residual scratches from on MAS. In conclusion, the SiC CMP mechanism was quite different from that of relatively softer materials to gain both high quality surfaces and a high MRR. Silicon Carbide (SiC) is a wide band gap semiconductor, being developed for high temperature, high power, and high frequency device applications. Many researchers have studied SiC polishing for the manufacturing of SiC and semiconductor substrates. However, these researchers have faced difficulties with a wafer preparation prior to epitaxial growth due to its hardness and remarkable chemical stability. A smooth and defect-free substrate surface is important to obtain good epitaxial layers. Therefore, a hybrid process, chemical mechanical polishing (CMP) has been proposed as a solution for preparing an epi-ready surface. During the experiments, the material removal rate (MRR) was investigated to learn how long the CMP process continues to remove a damaged layer by mechanical polishing using 100 nm diamond. Furthermore, the dependency of mechanical factors, such as pressure, velocity, and abrasive concentration, were researched using a single abrasive slurry (SAS). The experiments especially focused on the epi-ready surface with a mixed abrasive slurry (MAS). The addition of nanometre sized diamond in the MAS provided a strong synergy between mechanical and chemical effects. Through the experiments, a chemical effect (KOH based) was essential, and the atomic-bit mechanical removal was found to be efficient to remove residual scratches from on MAS. In conclusion, the SiC CMP mechanism was quite different from that of relatively softer materials to gain both high quality surfaces and a high MRR.
정해도(Haedo Jeong),박범영(Boumyoung Park),이현섭(Hyunseop Lee),김형재(Hyoungjae Kim),서헌덕(Heondeok Seo) 한국정밀공학회 2004 한국정밀공학회 학술발표대회 논문집 Vol.2004 No.10월
The CMP monitoring system was newly developed by the aid of friction force measurement, resulting from installation of piezoelectric quartz sensor on R&D polisher. The correlation between friction and CMP results was investigated in terms of tribological aspects by using the monitoring system. Various friction signals were monitored and analyzed by the change of experimental conditions such as pressure, velocity, pad and slurry. First of all, the lubrication regimes were classified with Sommerfeld Number through measuring coefficient of friction in ILD CMP. And then, the removal mechanism of abrasives could be understood through the correlation with removal rate and coefficient of friction. Especially, the amount of material removal per unit sliding distance is directly proportional to the friction force. The uniformity of CMP performances was also deteriorated as coefficient of friction increased.
Sukhoon Jeong,Sangjik Lee,Boumyoung Park,Hyoungjae Kim,Sungryul Kim,정해도 한국물리학회 2010 Current Applied Physics Vol.10 No.1
ECMD (electrochemical mechanical deposition) process consists of a traditional ECP (electrochemical plating) mechanism and a mechanical component. That is, this technique involves both electrochemical plating and mechanical sweeping of the material surface by the polishing pad. The mechanism of the ECMD process may be achieved through two mechanisms. The first mechanism may be the electrochemical plating on the surface where mechanical sweeping of polishing pad does not reach, and the second mechanism may be that the plating rate in the area that is mechanically swept may be reduced by the polishing pad. In this study, the effects of the mechanical component were investigated through various polishing pad types and hole ratios. In comparison to various polishing pad types using the manufactured the ECMD system, the plating rate and WIWNU (within wafer non-uniformity) using the experimental non-pore polishing pad were better than those of the experiments using other polishing pads.