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        Electric Conduction Mechanisms Study within Zr Doped Mn<sub>3</sub>O<sub>4</sub> Hausmannite Thin Films through an Oxidation Process in Air

        Said, L. Ben,Boughalmi, R.,Inoubli, A.,Amlouk, M. Korean Society of Microscopy 2017 Applied microscopy Vol.47 No.3

        In this work further optical and electrical investigations of pure and Zr doped $Mn_3O_4$ (from 0 up to 20 at.%) thin films as a function of frequency. First, the refractive index, the extinction coefficient and the dielectric constants in terms of Zr content are reached from transmittance and reflectance data. The dispersion of the refractive index is discussed by means of Cauchy model and Wemple and DiDomenico single oscillator models. By exploiting these results, it was possible to estimate the plasma pulse ${\omega}_p$, the relaxation time ${\tau}$ and the dielectric constant ${\varepsilon}_{\infty}$. Second, we have performed original ac and dc conductivity studies inspired from Jonscher model and Arrhenius law. These studies helped establishing significant correlation between temperature, activation energy and Zr content. From the spectroscopy impedance analysis, we investigated the frequency relaxation phenomenon and hopping mechanisms of such thin films. Moreover, a special emphasis has been putted on the effect of the oxidation in air of hausmannite thin films to form $Mn_2O_3$ ones at $350^{\circ}C$. This intrigue phenomenon which occurred at such temperature is discussed along with this electrical study. Finally, all results have been discussed in terms of the thermal activation energies which were determined with two methods for both undoped and Zr doped $Mn_3O_4$ thin films in two temperature ranges.

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        Lattice Compatibility Theory LCT investigations on physical and optical constants of antimony processed antimonite nano-films

        M. Haj Lakhdar,B. Ouni,R. Boughalmi,T. Larbi,A. Boukhachem,A. Colantoni,K. Boubaker,M. Amlouk 한국물리학회 2014 Current Applied Physics Vol.14 No.8

        Antimonite (Sb2S3) thin films have been synthesized through an annealing process in sulfur vapors at 300 C of Sb thermal evaporated films. Deposited films have been characterized by X-ray diffraction, scanning electron microscopy and UVeviseNIR spectroscopy. X-ray diagrams of these films have confirms that they were well crystallized in orthorhombic structure and some parameters such as the lattice parameter, crystallite size, microstrain and degree of preferred orientation have been reported and correlated with the effect of crystallite size. Optical properties of Sb2S3 films have been characterized by solid-state UVevisible absorption spectroscopy, and the band gap Eg was between 1.75 and 2.23 eV. Moreover, additional opto-thermal investigation and analyses within the framework of the Lattice Compatibility Theory provided plausible explanation for thickness-dependent incorporation of sulfur element inside antimony elaborated matrices.

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