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Non-Doped Organic Light-Emitting Diodes with Saturated Red Emission
Fei Xiao,Bing-xian Shao,Huan-rong Wu,Hui-ying Fu,Xiao-yuan Hou,Xin-dong Gao,Yi-qiang Zhan 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.50 No.2
Non-doped organic light-emitting diodes with saturated red emission were fabricated using 4-(2-(3,3-dicyanomethylene-5,5-dimethyl-1-cyclohexylidene)vinyl)phenyldi(1-naphthyl)amine (DNP-2CN) or 4-(2-(3,3-dicyanomethylene-5,5-dimethyl-1-cyclohexylidene)vinyl)phenyl(1-naphthyl)phe- nylamine (DPN-2CN) as the emitting layer. Different electron-transporting materials, tris(8-hydroxylquinoline) aluminum (Alq$_3$), 2,2',2''-(1,3,5-phenylene)tris[1-phenyl-1$H$-benzimidazole] (TPBI) and 2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD), were introduced into the devices for examining their energy level compatibility of DNP-2CN or DPN-2CN. The device with a structure of ITO/ NPB/ DNP-2CN/ BCP/ Alq$_3$/ LiF/ Al showed red emission with $\lambda_{max}$ at 670 nm (CIE coordinates: $x$ = 0.66, $y$ = 0.33) and a high luminance of 438 cd m$^{-2}$ at a driving voltage of 12 V. The device with a structure of ITO/ NPB/ DPN-2CN/ BCP/ Alq$_3$/ LiF/ Al showed a high brightness of 225 cd m$^{-2}$ at a driving voltage of 12 V with $\lambda_{max}$ at 674 nm (CIE coordinates: $x$ = 0.65, $y$ = 0.33).