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Bakin R.I.,Kiselev A.A.,Ilichev E.A.,Shvedov A.M. 한국원자력학회 2022 Nuclear Engineering and Technology Vol.54 No.12
A comprehensive approach for modeling the pulse height spectra of gamma-ray detectors from passing radioactive cloud in a case of accident at NPP has been developed. It involves modeling the transport of radionuclides in the atmosphere using Lagrangian stochastic model, WRF meteorological processor with an ARW core and GFS data to obtain spatial distribution of radionuclides in the air at a given moment of time. Applying representation of the cloud as superposition of elementary sources of gamma radiation the pulse height spectra are calculated based on data on flux density from point isotropic sources and detector response function. The proposed approach allows us to obtain time-dependent spectra for any complex radionuclide composition of the release. The results of modeling the pulse height spectra of the scintillator detector NaI(Tl) Ø63x63 mm for a hypothetical severe accident at a NPP are presented.
Studies of N-Doped p-ZnO Layers Grown on c-Sapphire by Radical Source Molecular Beam Epitaxy
S. V. Ivanov,A. El-Shaer,M. Al-Suleiman,A. Bakin,A. Waag,O. G. Lyublinskaya,N. M. Shmidt,S. B. Listoshin,R. N. Kyutt,V. V. Ratnikov,A. Ya. Terentyev,B. Ya. Ber,T. A. Komissarova,L. I. Ryabova,D. R. Kh 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
We report on the fabrication of p-type ZnO:N layers using radical-source molecular beam epitaxy and post-growth annealing of the samples. Plasma-activated oxygen and nitrogen fluxes are supplied via a single plasma cell. The combination of low growth temperature (350 − 400 ℃), slightly O-rich conditions, and post-growth annealing in the range of 650 − 800 ℃ results in efficient nitrogen pdoping with Hall hole concentration 3 × 1017 cm−3. The details of the structural and the electrical characterizations of the films are discussed. We report on the fabrication of p-type ZnO:N layers using radical-source molecular beam epitaxy and post-growth annealing of the samples. Plasma-activated oxygen and nitrogen fluxes are supplied via a single plasma cell. The combination of low growth temperature (350 − 400 ℃), slightly O-rich conditions, and post-growth annealing in the range of 650 − 800 ℃ results in efficient nitrogen pdoping with Hall hole concentration 3 × 1017 cm−3. The details of the structural and the electrical characterizations of the films are discussed.