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RISS 인기검색어
- 검색키워드
- 저자 : Baibaswata Mohapatra (검색결과 2 건)
- 무료
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- 유료
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Leaky Wave-Guide Based Dielectric Resonator Antenna for Millimeter-Wave Applications
Sovan Mohanty,Baibaswata Mohapatra 한국전기전자재료학회 2021 Transactions on Electrical and Electronic Material Vol.22 No.3
In this paper, a leaky wave antenna based on the parallel non-radiative dielectric guide (NRD) has been proposed. This novel design uses two parallel dielectric strip waveguides having a dielectric constant of 2.2 are placed over a substrate of the dielectric constant of 2.55 and both are separated by a ground plane. The upper structure is bounded by defl ating conducting strip having distance less than λ 0 /2. The leakage from this antenna is in the form of surface wave concentrated more in the broadside direction rather than usual endfire or off broadside direction. It has been observed the proposed radiating structure has radiation effi ciency of 82%, the peak gain of 5.94 dB with narrow impedance bandwidth, and the resonating frequency at 13.59 GHz, 13.43 GHz, and 13.93 GHz. A comparative analysis is made by increasing the height of the dielectric strip to increase the number of modes. This leaky-wave structure based on a non-radiative dielectric (NRD) guide can be a suitable candidate for the device to device (D2D) communication in the millimeter-wave band.
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Implementation of 12T and 14T SRAM Bitcell Using FinFET with Optimized Parameters
Rajesh Kumar Raushan,Mohammad Rashid Ansari,Usha Chauhan,Muhammad Khalid,Baibaswata Mohapatra 한국전기전자재료학회 2021 Transactions on Electrical and Electronic Material Vol.22 No.3
In this paper, we have implemented 12T and 14T SRAM bitcell using FinFET with optimized parameters. Optimized parameters are related in terms average power consumption, delay, power delay product (PDP), and energy delay product (EDP). Simulation results of all parameters of 12T and 14T SRAM bitcell are reported with 22 nm FinFET technology. All parameters of 12T and 14T SRAM using FinFET are compared to conventional 12T and 14T SRAM and found that the results have improved in average power consumption, PDP, EDP, and propagation delay. Parameters for 12T SRAM using FinFET includes average power consumption, propagation delay, PDP and EDP, which are improved by 99%, 79.2%, 99.7% and 99.7%, respectively. Similarly, designing 14T SRAM using FinFET, gets improvements of 99% in Average Power consumption, 76.5% in propagation Delay, 99.4% in PDP, and 99.5% in EDP.
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