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황진호,김두리,김민우,이한주,알센바바쟈얀,Levon ODABASHYAN,Zhirayr BAGHDASARYAN,이기진,차덕준 한국물리학회 2018 새물리 Vol.68 No.11
We studied the electrical properties of organic thin-film transistors (OTFTs) fabricated at different deposition rates by measuring the field-effect mobility and the threshold voltages. As the active layer, pentacene thin film with a thickness of 50 nm was deposited at a rate of 0.05 Å/s to 1.14 Å/s. The thickness of the drain-source gold electrode was 50 nm. The mobility was 1.9 $\times$ 10$^{-1}$ cm$^2$/V$\cdot$s at a deposition rate of 0.05 Å/s, the mobility increased to 5.2 $\times$ 10$^{-1}$ cm$^2$/V$\cdot$s when the deposition rate was increased to 0.4 Å/s, and then the mobility decreased to 6.5 $\times$ 10$^{-2}$ cm$^2$/V$\cdot$s when the deposition rate decreased to 1.14 Å/s. Thus, the mobility of pentacene OTFTs was observed to depend on the thermal deposition rate. 본 연구는 각각 다른 증착 속도로 제작된 유기 박막 트랜지스터(organic thin film transistor, OTFT)의 전하 이동도와 문턱 전압을 측정하여 전기적 성질을 분석했다. OTFT의 활성층으로, 펜타센 (pentacene)을 0.05 Å/s $\sim$ 1.14 Å/s의 증착 속도에 따라 50 nm의 두께로 진공 열 증착했다. 드레인-소스 전극은 금 (Au)을 50 nm의 두께로 증착했다. 펜타센 증착 속도가 0.05 Å/s일 때 전하 이동도는 1.9 $\times$ 10$^{-1}$ cm$^2$/V$\cdot$s 였고, 증착 속도가 0.4 Å/s로 증가함에 따라 전하 이동도는 5.2 $\times$ 10$^{-1}$ cm$^2$/V$\cdot$s 로 증가했으며, 증착 속도가 1.14 Å/s로 증가함에 따라 전하 이동도는 6.5 $\times$ 10$^{-2}$ cm$^2$/V$\cdot$s 로 감소했다. 따라서, 펜타센 기반의 OTFT의 전하 이동도는 열 증착 속도에 의존함을 관측하였다.
Photoproduction ofπ+π−meson pairs on the proton
Battaglieri, M.,De Vita, R.,Szczepaniak, A. P.,Adhikari, K. P.,Amaryan, M. J.,Anghinolfi, M.,Baghdasaryan, H.,Bedlinskiy, I.,Bellis, M.,Bibrzycki, L.,Biselli, A. S.,Bookwalter, C.,Branford, D.,Briscoe American Physical Society 2009 PHYSICAL REVIEW D - Vol.80 No.7
The extraction of φ–N total cross section from d(γ,p<sup>K+</sup><sup>K−</sup>)n
Qian, X.,Chen, W.,Gao, H.,Hicks, K.,Kramer, K.,Laget, J.M.,Mibe, T.,Stepanyan, S.,Tedeschi, D.J.,Xu, W.,Adhikari, K.P.,Amaryan, M.,Anghinolfi, M.,Baghdasaryan, H.,Ball, J.,Battaglieri, M.,Batourine, V Elsevier 2009 Physics letters: B Vol.680 No.5
<P><B>Abstract</B></P><P>We report on the first measurement of the differential cross section of <I>φ</I>-meson photoproduction for the d(γ,p<SUP>K+</SUP><SUP>K−</SUP>)n exclusive reaction channel. The experiment was performed using a tagged-photon beam and the CEBAF Large Acceptance Spectrometer (CLAS) at Jefferson Lab. A combined analysis using data from the d(γ,p<SUP>K+</SUP><SUP>K−</SUP>)n channel and those from a previous publication on coherent <I>φ</I> production on the deuteron has been carried out to extract the φ−N total cross section, <SUB>σφN</SUB>. The extracted φ−N total cross section favors a value above 20 mb. This value is larger than the value extracted using vector-meson dominance models for <I>φ</I> photoproduction on the proton.</P>
CLAS Collaboration,Pereira, S.A.,Mirazita, M.,Rossi, P.,De Sanctis, E.,Niculescu, G.,Niculescu, I.,Stepanyan, S.,Adhikari, K.P.,Aghasyan, M.,Anghinolfi, M.,Baghdasaryan, H.,Ball, J.,Battaglieri, M.,Be North-Holland Pub. Co 2010 Physics letters: B Vol.688 No.4
<P>Differential cross sections of the reaction gamma d -> K+Sigma(-)(p) have been measured with the CLAS detector at Jefferson Lab using incident photons with energies between 1.1 and 3.6 GeV. This is the first complete set of strangeness photoproduction data on the neutron covering a broad angular range. At energies close to threshold and up to E-gamma similar to 1.8 GeV. the shape of the angular distribution is suggestive of the presence of s-channel production mechanisms. For E-gamma > 1.8 GeV, a clear forward peak appears and becomes more prominent as the photon energy increases, suggesting contributions from t-channel production mechanisms. These data can be used to constrain future analysis of this reaction. (c) 2010 Elsevier B.V. All rights reserved.</P>