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- 저자 : Bablu K. Ghosh (검색결과 1 건)
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Low Leakage Current by Solution Processed PTAA‑ZnO Transparent Hybrid Hetero‑Junction Device
Bablu K. Ghosh,Abdul I. A. Rani,Khairul A. Mohamad,Ismail Saad 대한금속·재료학회 2020 ELECTRONIC MATERIALS LETTERS Vol.16 No.5
In this work solution processed novel poly-triarylamine (PTAA) organic p-type active layer on inorganic n-ZnO devicetransparency and electrical properties are investigated under illumination. Low cost organic–inorganic transparent hybridhetero-junction (HHJ) is a promising candidate for next-generation photovoltaic applications. Greater band gap organicmaterial window layer while inorganic material’s higher thermal stability as HHJ is suitable for detection and photovoltaicapplications. However, hetero-interface defects associated leakage current is the key issue of undermining large-area deviceelectrical performance. Hetero-interface defect associated carriers optical absorption limits transparency whereas leakagecurrent density is reliant on physical property and band barrier effect. It is demanded to investigate hetero-device physicalstuff and band barrier effect on electrical properties. Novel PTAA is deposited on RF-sputtered inorganic n-ZnO/ITO/glasssubstrate by spin-coating method. 100 and 60 nm PTAA thin films are deposited with 1000 and 2000 revolution per minute(rpm) growth sequence, respectively. PTAA as a transparent p-emitter is shown to absorb incident light beyond visible band,thereby it has promoted excitonic effect. Device I–V characterization carried out at different annealing temperatures andapplied voltage. Suitable annealing condition leakage current is shown to reduce nearly 10−4 A/cm2 and at higher appliedfield the greater rectifying I(+)/I(−) ratio is realized. Grain size is shown to increase with annealing effect however; leakagecurrent is remained almost independent of grain size.
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