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Band offsets in ITO/Ga<sub>2</sub>O<sub>3</sub> heterostructures
Carey IV, Patrick H.,Ren IV, F.,Hays IV, David C.,Gila IV, B.P,Pearton IV, S.J.,Jang IV, Soohwan,Kuramata IV, Akito Elsevier 2017 APPLIED SURFACE SCIENCE - Vol.422 No.-
<P><B>Abstract</B></P> <P>The valence band offsets in rf-sputtered Indium Tin Oxide (ITO)/single crystal β-Ga<SUB>2</SUB>O<SUB>3</SUB> (ITO/Ga<SUB>2</SUB>O<SUB>3</SUB>) heterostructures were measured with X-Ray Photoelectron Spectroscopy using the Kraut method. The bandgaps of the component materials in the heterostructure were determined by Reflection Electron Energy Loss Spectroscopy as 4.6eV for Ga<SUB>2</SUB>O<SUB>3</SUB> and 3.5eV for ITO. The valence band offset was determined to be −0.78±0.30eV, while the conduction band offset was determined to be −0.32±0.13eV. The ITO/Ga<SUB>2</SUB>O<SUB>3</SUB> system has a nested gap (type I) alignment. The use of a thin layer of ITO between a metal and the Ga<SUB>2</SUB>O<SUB>3</SUB> is an attractive approach for reducing contact resistance on Ga<SUB>2</SUB>O<SUB>3</SUB>-based power electronic devices and solar-blind photodetectors.</P> <P><B>Highlights</B></P> <P> <UL> <LI> We measured the band offsets of ITO on Ga<SUB>2</SUB>O<SUB>3</SUB>, a promising wide bandgap semiconductor for solar-blind detectors and power electronics. </LI> <LI> The band alignment is nested (type I), with a valence band offset of −0.78eV </LI> <LI> The results show the use of ITO interlayers will be beneficial to improving Ohmic contacts on Ga<SUB>2</SUB>O<SUB>3</SUB>. </LI> </UL> </P>
Measurement of band offsets in MgO/InGaZnO4 heterojunction by X-ray photoelectron spectroscopy
최병수,K. W. Kim,B. P Gila,D. P. NORTON,S. J. PEARTON,조현 한양대학교 세라믹연구소 2017 Journal of Ceramic Processing Research Vol.18 No.9
Amorphous InGaZnO4 (α-IGZO) thin film transistors (TFTs) are one of the most promising candidates for switches in theactive-matrix and driver-integrated circuits of transparent liquid crystal displays and flexible displays. The stability andoverall performance of amorphous IGZO TFTs depend to a great extent on the band offsets in gate dielectric/α-IGZOheterojunction. The energy discontinuity in the valence band (ΔEV) and conduction band (ΔEC) in MgO/IGZO heterojunctionswere systematically examined by using X-ray photoelectron spectroscopy (XPS). The MgO gate dielectric was found to havea straddled type band offset alignment on the IGZO. The valence band offset value for the MgO/IGZO heterojunction wasdetermined as 0.81 ± 0.17 eV using the Ga 2p3/2, Zn 2p3/2 and In 3d5/2 energy levels as references. The bandgap energy differencebetween the MgO and IGZO led to a corresponding conduction band offset (ΔEC) of ~3.79 eV and a nested interface alignment.
Abernathy, C.R.,Gila, B.P.,Onstine, A.H.,Pearton, S.J.,Kim, Ji-Hyun,Luo, B.,Mehandru, R.,Ren, F.,Gillespie, J.K.,Fitch, R.C.,Seweel, J.,Dettmer, R.,Via, G.D.,Crespo, A.,Jenkins, T.J.,Irokawa, Y. The Institute of Electronics and Information Engin 2003 Journal of semiconductor technology and science Vol.3 No.1
Both MgO and $Sc_2O_3$ are shown to provide low interface state densities (in the $10^{11}{\;}eV^{-1}{\;}cm{\;}^{-2}$ range)on n-and p-GaN, making them useful for gate dielectrics for metal-oxide semiconductor(MOS) devices and also as surface passivation layers to mitigate current collapse in GaN/AlGaN high electron mobility transistors(HEMTs).Clear evidence of inversion has been demonstrated in gate-controlled MOS p-GaN diodes using both types of oxide. Charge pumping measurements on diodes undergoing a high temperature implant activation anneal show a total surface state density of $~3{\;}{\times}{\;}10^{12}{\;}cm^{-2}$. On HEMT structures, both oxides provide effective passivation of surface states and these devices show improved output power. The MgO/GaN structures are also found to be quite radiation-resistant, making them attractive for satellite and terrestrial communication systems requiring a high tolerance to high energy(40MeV) protons.
Comparison of Surface Passivation Layers on InGaN/GaN MQW LEDs
Yang, Hyuck-Soo,Han, Sang-Youn,Hlad, M.,Gila, B.P.,Baik, K.H.,Pearton, S.J.,Jang, Soo-Hwan,Kang, B.S.,Ren, F. The Institute of Electronics and Information Engin 2005 Journal of semiconductor technology and science Vol.5 No.2
The effect of different surface passivation films on blue or green (465-505 nm) InGaN/GaN multi-quantum well light-emitting diodes (LEDs) die were examined. $SiO_2$ or $SiN_x$ deposited by plasma enhanced chemical vapor deposition, or $Sc_2O_3$ or MgO deposited by rf plasma enhanced molecular beam epitaxy all show excellent passivation qualities. The forward current-voltage (I-V) characteristics were all independent of the passivation film used, even though the MBE-deposited films have lower interface state densities ($3-5{\times}10^{12}\;eV^{-1}\;cm^{-2}$) compared to the PECVD films (${\sim}10^{12}\;eV^{-1}\;cm^{-2}$), The reverse I-V characteristics showed more variation, hut there was no systematic difference for any of the passivation films, The results suggest that simple PECVD processes are effective for providing robust surface protection for InGaN/GaN LEDs.
Lee, G. S.,Lee, C.,Choi, H.,Ahn, D. J.,Kim, J.,Gila, B. P.,Abernathy, C. R.,Pearton, S. J.,Ren, F. WILEY-VCH Verlag 2007 Physica status solidi. PSS. A, Applications and ma Vol.204 No.10
<P>PDA(Polydiacetylene)-supramolecules were successfully immobilized on the surface of Sc<SUB>2</SUB>O<SUB>3</SUB>/GaN/Sapphire structures for use as selective NH<SUB>3</SUB> gas sensors. The Sc<SUB>2</SUB>O<SUB>3</SUB> was epitaxially grown on GaN/Sapphire templates by molecular beam epitaxy (MBE) to replace the non-uniform native Ga<SUB>2</SUB>O<SUB>3</SUB>. The GaN-based PDA gas sensors showed excellent selectivity for ammonia detection after the end-functional group was modified to respond to this specific gas species. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)</P>
Comparison of Surface Passivation Layers on InGaN/GaN MQW LEDs
Hyuck Soo Yang,Sang Youn Han,M. Hlad,B. P. Gila,K. H. Baik,S. J. Pearton,Soohwan Jang,B. S. Kang,F. Ren 대한전자공학회 2005 Journal of semiconductor technology and science Vol.5 No.2
The effect of different surface passivation films on blue or green (465-505 nm) InGaN/GaN multiquantum well light-emitting diodes (LEDs) die were examined. SiO₂or SiNx deposited by plasma enhanced chemical vapor deposition, or Sc₂O₃or MgO deposited by rf plasma enhanced molecular beam epitaxy all show excellent passivation qualities. The forward currentvoltage (I-V) characteristics were all independent of the passivation film used, even though the MBE-deposited films have lower interface state densities (3-5×10¹¹ eV-¹ cm-²) compared to the PECVD films (~10¹² eV-1 cm-²). The reverse I-V characteristics showed more variation, but there was no systematic difference for any of the passivation films. The results suggest that simple PECVD processes are effective for providing robust surface protection for InGaN/GaN LEDs.
Band Offsets in YSZ/InGaZnO<sub>4</sub> Heterostructure System
Kim, J.K.,Kim, K.-W.,Douglas, E.A.,Gila, B.P.,Craciun, V.,Lambers, E.S.,Norton, D.P.,Ren, F.,Pearton, S.J.,Cho, H. American Scientific Publishers 2014 Journal of Nanoscience and Nanotechnology Vol.14 No.5
The energy discontinuity in the valence band (Delta E-V) of Y2O3-stabilized ZrO2 (YSZ)/InGaZnO4 (IGZO) heterostructures was obtained from X-ray photoelectron spectroscopy (XPS) measurements. The YSZ exhibited a bandgap of 4.4 eV from absorption measurements. A value of Delta E-V = 0.57 +/- 0.12 eV was obtained by using Ga 2p(3/2), Zn 2p(3/2) and In 3d(5/2) energy levels as references. This implies a conduction band offset (Delta E-C) of 0.63 eV in YSZ/InGaZnO4 heterostructures and a nested interface band alignment.