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ITO/Au/ITO multilayer thin films on transparent polycarbonate with enhanced EMI shielding properties
Nursev Erdogan,Fuat Erden,A. Taner Astarlioglu,Mehtap Ozdemir,Salih Ozbay,Gulnur Aygun,Lutfi Ozyuzer 한국물리학회 2020 Current Applied Physics Vol.20 No.4
ITO/Au/ITO multilayer thin films were deposited onto polycarbonate substrate via magnetron sputtering technique without intentional heating. The deposition times of both ITO and Au layers were studied to optimize the overall transparency and conductivity. As-prepared thin films were characterized using X-ray diffraction analysis, secondary ion mass spectroscopy, scanning and transmission electron microscopy, atomic force microscopy and physical property measurement system. The optical measurement results revealed that the transmittance of the films were enhanced by increasing the gold deposition time up to 15 s. Beyond this point, further increasing the duration caused a decrease in optical transmittance. Upon optimization of the Au deposition time, the deposition duration of ITO layers was also studied to increase electromagnetic interference (EMI) shielding effectiveness (SE). Maximum EMI SE in this work was measured as 26.8 dB, yielding 99.8% power attenuation, which was verified by simulation results.
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Turkoglu Fulya,Ekren Memduh Emirhan,Cantas Ayten,Yakinci Kubra,Gundogan Hazal,Koseoglu Hasan,Aygun Gulnur,Ozyuzer Lutfi 한국물리학회 2022 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.81 No.3
Antimony triselenide (Sb2Se3) is one of the most promising absorber material choices among the inorganic semiconductors that has attracted much attention today. However, highest recorded efciencies for Sb2Se3 solar cells are still lower than ideal. Exploring antimony selenosulfde (Sb2(SxSe1−x)3) to increase device performance is one option because some features of alloyed Sb2(SxSe1−x)3 depend on composition such as bandgap and band position. In this study, two-step process was used to grow Sb2(SxSe1−x)3 thin flms. In the frst stage, Sb2Se3 thin flms were deposited on soda lime glass substrates using direct current magnetron sputtering technique. In the second stage, Sb2Se3 thin flms were exposed to sulfurization process in a quartz ampoule to obtain Sb2(SxSe1−x)3 thin flms. Characterization results showed that morphological, optical, and structural properties of Sb2(SxSe1−x)3 thin flms grown by presented method were highly dependent on amount of sulfur in the flms. By the adjustment of the S/S+Se atomic ratio, Sb2(SxSe1−x)3 absorber materials with suitable bandgap, favorable orientation and compact morphology can be obtained for photovoltaic applications.
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