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Growth of oriented $LaF_{3}$ thin films on Si (100) substrates by the pulsed laser deposition method
Yokotani, Atsushi,Ito, Tomomi,Sato, Akiko,Kurosawa, Kou The Korea Association of Crystal Growth 2003 韓國結晶成長學會誌 Vol.13 No.4
$LaF_{3}$ thin films have been fabricated on Si (100) substrates under the highest possible vacuum condition by pulsed laser deposition (PLD) method. The temperature of the sbustrate varied from $20^{\circ}C$ to $800^{\circ}C$. The films deposited at the higher temperature indicated the sharper peaks in the X-ray diffraction measurement. A highly oriented film was successfully obtained at a substrate temperature of $800^{\circ}C$. The surface observation by the AFM revealed that the many hexagonal structures constructed the film. The XPS analysis revealed that the lacking of F in the film deposited at $600^{\circ}C$ were much more than that in film at $^20{\circ}C$. Adding the adequate amount of $CF_{4}$ gas in the growth chamber can compensate this lacking of F.
STM observation of initial stage of growth of Si-Mn films on Si(111)7 × 7 surface
Atsushi Yokotani,Ryota Kihara,Kohei Nakayoshi 한양대학교 세라믹연구소 2015 Journal of Ceramic Processing Research Vol.16 No.1
Recently, it has become very important to obtain knowledge about interactions between substrates and deposited materials in an atomic scale. In this study, we focused on the initial stage of Si-Mn films adsorbed on to a Si(111) substrate. A sample were prepared by depositing the Mn particles onto a cleaned Si(111) substrate by the pulsed laser deposition (PLD) method and the observation was performed with a scanning tunneling microscope (STM). First, we have observed adsorption site, size and shape of the particles at room temperature. Next, the change of the STM image at elevated temperature up to 200 o C was observed. In this paper, we have discussed about the structure of clustered Mn particles on Si(111) substrate by comparing the result with particles of other kinds.