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Design of Two-Stage Class AB CMOS Buffers: A Systematic Approach
Antonio Lopez Martin,Jose Maria Algueta Algueta,Lucia Acosta,Jaime Ramirez-Angulo,Ramon Gonzalez Carvajal 한국전자통신연구원 2011 ETRI Journal Vol.33 No.3
A systematic approach for the design of two-stage class AB CMOS unity-gain buffers is proposed. It is based on the inclusion of a class AB operation to class A Miller amplifier topologies in unity-gain negative feedback by a simple technique that does not modify quiescent currents, supply requirements, noise performance, or static power. Three design examples are fabricated in a 0.5 μm CMOS process. Measurement results show slew rate improvement factors of approximately 100 for the class AB buffers versus their class A counterparts for the same quiescent power consumption (< 200 μW).
Low-Voltage Tunable Pseudo-Differential Transconductor with High Linearity
Juan Antonio Gómez,Melita Pennisi,Antonio Lopez Martin,Ramon González Carvajal,Jaime Ramírez-Angulo,Manuel Pedro Carrasco 한국전자통신연구원 2009 ETRI Journal Vol.31 No.5
A novel tunable transconductor is presented. Input transistors operate in the triode region to achieve programmable voltage-to-current conversion. These transistors are kept in the triode region by a novel negative feedback loop which features simplicity, low voltage requirements, and high output resistance. A linearity analysis is carried out which demonstrates how the proposed transconductance tuning scheme leads to high linearity in a wide transconductance range. Measurement results for a 0.5 μm CMOS implementation of the transconductor show a transconductance tuning range of more than a decade (15 μA/V to 165 μA/V) and a total harmonic distortion of -67 dB at 1 MHz for an input of 1 Vpp and a supply voltage of 1.8 V.
Novel Low-Power High-dB Range CMOS Pseudo-Exponential Cells
Carlos Aristoteles De La Cruz Blas,Antonio Lopez-Martin 한국전자통신연구원 2006 ETRI Journal Vol.28 No.6
In this paper, novel CMOS pseudo-exponential circuits operating in a class-AB mode are presented. The pseudoexponential approximation employed is based on second order equations. Such terms are derived in a straightforward way from the inherent nonlinear currents of class-AB transconductors. The cells are appropriate to be integrated in portable equipment due to their compactness and very low power consumption. Measurement results from a fabricated prototype in a 0.5 μm technology reveal a range of 45 dB with errors lower than ±0.5 dB, a power consumption of 100 μW, and an area of 0.01 mm2.