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Comprehensive review on potential applications of microfluidization in food processing
Anit Kumar,Atul Dhiman,Rajat Suhag,Rachna Sehrawat,Ashutosh Upadhyay,David Julian McClements 한국식품과학회 2022 Food Science and Biotechnology Vol.31 No.1
Microfluidizer is one of the emerging processing technologies which has brought tremendous and desirable changes in food matrix. By generating high cavitation, shear, velocity impact and turbulent forces, microfluidizer brought structural modifications in food which led to significant improvements in physicochemical, functional, nutritional, rheological and sensory properties of food products without affecting their natural flavour. Reduction in particle size and thereby increase in surface area has brought these unique modifications. Microfluidization also improved bioavailability and bioaccessibility of bioactives by making them more exposed. Applications of microfluidizer includes stable emulsion/suspension formation, encapsulation, and nanoparticle production. It has also shown its preservation potential by inactivating enzymes and microbes thus improving food stability. The present review comprehensively discusses the working principle and effect of microfluidizer on dairy products, fruit juices, cereals, starches, egg yolk, emulsions, suspensions, and other novel products formulations. Microfluidization has opened a new channel for developing novel food ingredients non-thermally.
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Rohit Sharma,Ashish Kumar,Anit Dawar,Sunil Ojha,Ambuj Mishra,Anshu Goyal,Radhapiyari Laishram,V. G. Sathe,RITU SRIVASTAVA,Om Prakash Sinha 한국전기전자재료학회 2023 Transactions on Electrical and Electronic Material Vol.24 No.2
Field effect transistors (FETs) are considered as the backbone of electronic industry. In this study, we adopted a simple drop cast method for the fabrication of MoS2 and WS2 channel based FET on commercially available pre-patterned OFET devices. The synthesis of few-layers thick MoS2 and WS2 nanosheets (NSs) has been done by solvent-assisted exfoliation method. FESEM and TEM study reveals that NSs have lateral dimensions in micron and have polycrystalline nature. From XPS, it is observed that MoS2 NSs has 2H phase whereas WS2 have hybrid 1T and 2H phase. The frequency difference in Raman vibrational mode for MoS2 and WS2 NSs is 24.08 cm-1 and 63.84 cm-1 respectively, confirms that number of layers is reduced after sonication. UV-visible spectroscopy reveals that the bandgap is 1.7 eV and 1.8 eV for MoS2 and WS2 NSs respectively. Later, these nanosheets have been drop-casted as the channel material on pre-patterned FETs devices and their output and transfer characteristics have been studied. It found that the current On/Off ratio is 10 4 and 10 3 for MoS 2 and WS2-FET device respectively. This facile fabrication of FET devices may provide a new stage for researchers who do not have access of lithography facilities for FET fabrication.
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