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Amuthasurabi.M,Chandradass. J,Seong-Ju Park,Baskara Sethupathi.P 한양대학교 세라믹연구소 2019 Journal of Ceramic Processing Research Vol.20 No.1
Inverted staggered thin film transistors (TFTs) using magnesium zinc oxide (MgZnO) material as a channel layer have beenfabricated over the glass substrate. A radio frequency magnetron sputtering technique was used to deposit thin films at a verylow temperature of 100 oC. The structural and electrical characteristics were investigated. The semiconductor film showsslightly enhanced grain size without any crack with few grain boundaries. For the first time the self heating effect on the TFTfabricated using MgZnO was discussed. The electrical characteristics of MgZnO based device exhibit reduced self-heatingeffect compared with undoped zinc oxide. The calculated parameters are carrier mobility 1.08 cm2/V-s, threshold voltage 15V, leakage current 10−10 A and current ratio (on/off) 10−5. The low deposition and processing temperatures make MgZnOTFTsvery promising for the flexible electronics.
M. Amuthasurabi,J. Chandradass,V Ramesh Babu,P.Baskara Sethupathi,M. Leenus Jesu Martin 한양대학교 세라믹연구소 2017 Journal of Ceramic Processing Research Vol.18 No.11
We report on the performance of the thin film transistors (TFTs) using ZnO as an active channel layer grown by using radio frequency (rf) magnetron sputtering technique. The TFT device structure used in this study was a bottom gate type, which consists of SiNx as a gate insulator and indium tin oxide (ITO) as a gate deposited onto corning glass substrates. Electrical characteristics of the device showed clear saturation region without any output current degradation due to self heating effect. These ZnO TFTs had a saturation field effect mobility of about 2.14 cm2/Vs, an on to off ratio of greater than 105, the off current of less than 10−10 A and a threshold voltage of 15 V at a maximum device processing temperature of 350 oC. This TFT had a channel width of 300 μm and channel length of 30 μm. Moreover, the SiNx dielectric layer was found to be optimum for the high performance ZnO based TFTs because of the very low leakage current and good interface between the channel layer and gate material.
M. Amuthasurabi 한양대학교 세라믹연구소 2017 Journal of Ceramic Processing Research Vol.18 No.1
Zinc oxide (ZnO) channel layer transistors in inverted staggered type were fabricated by magnetron sputtering at differenttemperatures. The deposition condition of ZnO thin films were analyzed by a field-emission scanning electron microscope andX-ray diffraction measurement and the surface morphology of films were improved by the optimized sputtering parameters. The electrical characteristics of device showed the presence of self-heating effect. The self-heating effect was more pronouncedby lowering the temperature due to the creation of more defects in the channel material. It act as traps for charge carrier anddegrade the drain current of device which in turn alters the overall device parameters. Current-Voltage characteristics weremeasured and relevant transistor parameters were calculated and tabulated. The self-heating effect at different temperatureswas compared.