Fabrication of thin film transistor using magnesium zinc oxide (MgZnO) as a semiconductor layer by magnetron sputtering technique

다국어 초록 (Multilingual Abstract)

Inverted staggered thin film transistors (TFTs) using magnesium zinc oxide (MgZnO) material as a channel layer have beenfabricated over the glass substrate. A radio frequency magnetron sputtering technique was used to deposit thin films at a verylow temperature of 100 oC. The structural and electrical characteristics were investigated. The semiconductor film showsslightly enhanced grain size without any crack with few grain boundaries. For the first time the self heating effect on the TFTfabricated using MgZnO was discussed. The electrical characteristics of MgZnO based device exhibit reduced self-heatingeffect compared with undoped zinc oxide. The calculated parameters are carrier mobility 1.08 cm2/V-s, threshold voltage 15V, leakage current 10−10 A and current ratio (on/off) 10−5. The low deposition and processing temperatures make MgZnOTFTsvery promising for the flexible electronics.

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