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Kim, Ki Seok,Sirse, Nishant,Kim, Ki Hyun,Ellingboe, Albert Rogers,Kim, Kyong Nam,Yeom, Geun Young IOP 2016 Journal of Physics. D, Applied Physics Vol.49 No.39
<P>To prevent moisture and oxygen permeation into flexible organic electronic devices formed on substrates, the deposition of an inorganic diffusion barrier material such as SiN<SUB> <I>x</I> </SUB> is important for thin film encapsulation. In this study, by a very high frequency (162 MHz) plasma-enhanced chemical vapor deposition (VHF-PECVD) using a multi-tile push–pull plasma source, SiN<SUB> <I>x</I> </SUB> layers were deposited with a gas mixture of NH<SUB>3</SUB>/SiH<SUB>4</SUB> with/without N<SUB>2</SUB> and the characteristics of the plasma and the deposited SiN<SUB> <I>x</I> </SUB> film as the thin film barrier were investigated. Compared to a lower frequency (60 MHz) plasma, the VHF (162 MHz) multi-tile push–pull plasma showed a lower electron temperature, a higher vibrational temperature, and higher N<SUB>2</SUB> dissociation for an N<SUB>2</SUB> plasma. When a SiN<SUB> <I>x</I> </SUB> layer was deposited with a mixture of NH<SUB>3</SUB>/SiH<SUB>4</SUB> with N<SUB>2</SUB> at a low temperature of 100 °C, a stoichiometric amorphous Si<SUB>3</SUB>N<SUB>4</SUB> layer with very low Si–H bonding could be deposited. The 300 nm thick SiN<SUB> <I>x</I> </SUB> film exhibited a low water vapor transmission rate of 1.18 × 10<SUP>−4</SUP> g (m<SUP>2</SUP> · d)<SUP>−1</SUP>, in addition to an optical transmittance of higher than 90%.</P>