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RF 마그네트론 스퍼터링법으로 증착한 태양전지용 GZO/ITO 투명전도성 박막의 물성에 미치는 ITO층의 영향
정아로미(Ah-Ro-Mi Chung),송풍근(Pung-keun Song) 한국표면공학회 2011 한국표면공학회지 Vol.44 No.6
GZO/ITO double layered films were deposited on unheated non-alkali glass substrates by RF magnetron sputtering using an ITO (SnO2: 10 wt%) and GZO(Ga2O3: 5.57 wt%) ceramic targets, respectively. The electrical resistivity of GZO/ITO films depends on the thickness ratio between the GZO film and ITO film. With increasing ITO film thickness, the resistivity of GZO/ITO films decreased which due to large increase in the Hall mobility. Also, the crystallinity of GZO/ITO film was improved with an increase in ITO thickness which was evaluated by X-ray diffraction. The average transmittance of the films was more than 85% in the visible region, which is slightly higher than ITO single layer films.