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RISS 인기검색어
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- 저자 : Abdulmecit Turut (검색결과 2 건)
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Demet Korucu,Abdulmecit Turut,S¸ emsettin Altındal 한국물리학회 2013 Current Applied Physics Vol.13 No.6
Capacitanceevoltage (CeV) and conductanceevoltage (G/ueV) measurements of the Au/n-GaAs Schottky barrier diodes (SBDs) in the wide frequency range of 10 kHze10 MHz at room temperature were carried out in order to evaluate the reason of negative capacitance (NC). Experimental results show that C and G/u are strong functions of frequency and bias voltage especially in the accumulation region. NC behavior was observed in the CeV plot for each frequency and the magnitude of absolute value of C increases with decreasing frequency in the forward bias region. Contrary to C, G/u increases with decreasing frequency positively in this region. NC behavior may be explained by considering the loss of interface charges at occupied states below Fermi level due to impact ionization processes. Such behavior of the C and G/u values can also be attributed to the increase in the polarization especially at low frequencies and the introduction of more carriers in the structure. The values of Rs decrease exponentially with increasing frequency according to literature. In addition, the values of C and G/u at 1 MHz were corrected to obtain the real diode capacitance by taking the effect of Rs into account.
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The electrical characterizations and illumination response of Co/N-type GaP junction device
Ikram Orak,Kadir Ejderha,Abdulmecit Turut 한국물리학회 2015 Current Applied Physics Vol.15 No.9
The manuscript describes characterization of a Co/n-GaP junction device. The currentevoltage etemperature (I-V-T), capacitanceefrequencyetemperature (C-f-T) measurements of the device were analyzed in the temperature range of 60e320 K by the steps of 20 K under dark condition, and light condition at room temperature. The characteristic parameters such as barrier height (BH), ideality factor (n) have been determined from the forward bias IeV characteristics on the basis of standard thermionic emission. The BH and n were found to be 0.98 eV and 1.05 at room temperature, respectively. The ideality factor increased and BH decreased with a decrease in temperature. The BH and n were found to be linear dependent on each other at two different regions, and these values are predicted with existence of Gaussian distribution (GD). For the two different methods the BH is seen in good agreement with each other. Especially, the homogeneous BH for the first region is found to around 1.02 eV. The homogeneous BH values are found to be good agreement for 3 different methods such as the linear correlations of BH versus n plot, GD of BHs and Norde's function. Interface states (Nss) and their time constant (t) were calculated from the C-f-T measurements and as sample temperature was increased, the Nss value increased and t decreased in dark conditions. Photovoltaic parameters such as fill factor (FF), power conversion efficiency (ηp), open circuit voltage (Voc) and short circuit current (Isc) were calculated. According to these, it was been seen that the semiconductor device under light illumination showed photovoltaic behavior.
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