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CCCC법에 의한 태양전지용 다결정 실리콘 잉고트의 제조
신제식(Shin, J. S.),이동섭(Lee, D. S.),이상목(Lee, S. M.),문병문(Moon, B. M.) 한국신재생에너지학회 2005 한국신재생에너지학회 학술대회논문집 Vol.2005 No.06
For the fabrication of poly-crystalline silicon ingot, CCCC (Cold Crucible Continuous Casting) method under a high frequency alternating magnetic field, was utilized in order to prevent crucible consumption and ingot contamination and to increase production rate. In order to effectively and continuously melt and cast silicon, which has a high radiation heat loss due to the high melting temperature and a low induction heating efficiency due to a low electric conductivity, Joule and pinch effects were optimized. Throughout the present investigation, poly-crystalline Si ingot was successfully produced at the casting speed of above 1.5 mm/min under a non-contact condition.
이택동,유지형,신제식,배준수,이진형,이혁모 대한금속재료학회(대한금속학회) 2001 대한금속·재료학회지 Vol.39 No.4
The ordered phase was tried to disappear in 6.5% Si steel to reduce the power loss and enhance the economic interests. They were prepared by the conventional casting or spray forming method, and they were investigated using the transmission electron microscopy(TEM). The variation in the methods of preparing the specimen did not result in any difference in suppressing the ordered B2 phase in the Fe-Si binary system. It was almost impossible to suppress this ordered phase keeping the silicon level as high as 6.5% even after the heat treatment at 1000℃ for 24 hr or after hot rolling. It was necessary to change the silicon level and control the cooling rate to prevent the ordering reaction, especially, in cooling after heat treatments. The silicon level of 5.8% was obtained as a maximum desirable value.