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On-chip 발룬을 포함한 2.45㎓대역 RFID용 LNA-Mixer설계
林泰瑞(Tae-Seo Lim),高在亨(Jae-Hyeong Ko),鄭孝彬(Hyo-Bin Jung),金炯碩(Hyeong-Seok Kim) 대한전기학회 2007 전기학회논문지 Vol.56 No.11
This paper presents the design and analysis of LNA-Mixer for 2.45㎓ RFID reader. The LNA is implemented by PCSNIM method for low power consumption. The Mixer is implemented by using the Gilbert-type configuration, current bleeding technique and the resonating technique for the tail capacitance. The connection between the two designed circuits is made by active balun. This LNA-Mixer has about 22㏈ gain and 8.5㏈ Noise Figure for -50㏈m input RF power, LO power is 0㏈m, RF frequency is 2.45 ㎓ and IF frequency is 100㎑. The layout of LNA-Mixer for one-chip design in a 0.18-㎛ TSMC process has 2.5㎜ × 1.0㎜ size.
Sub-harmonic 능동형 혼합기를 이용한 2.45㎓ 직접변환 수신기용 RF Front-End 설계 방법에 관한 연구
林泰瑞(Tae-Seo Lim),高在亨(Jae-Hyeong Ko),鄭孝彬(Hyo-Bin Jung),金炯碩(Hyeong-Seok Kim) 대한전기학회 2008 전기학회논문지 Vol.57 No.7
In this paper, we presented an active RFID system in 2.45㎓ range including LNA, Mixer and gain block. And in this work, a link budget model for RFID applications are proposed. We describe the detailed design and implementation of our system. Our components in RFID system has features such as low Noise Figure, reliable energy budget, and standard compliance with ISO 18000-4. Our receiver is effective for development and evaluation of prototype applications because of the flexibility of the design hardware. So, our platform will be suitable for versatile item management applications.
이중 대역 RFID 리더에 적용 가능한 Concurrent 이중 대역 저잡음 증폭기 설계 연구
吳在旭(Jae-Wook Oh),林泰瑞(Tae-Seo Lim),金炯碩(Hyeong-Seok Kim) 대한전기학회 2007 전기학회논문지 Vol.56 No.4
In this paper, we deal wih a concurrent dual band low noise amplifier for a Radio Frequency Identification(RFID) reader operating at 912㎒ and 2.45㎓. The design of the low noise amplifier is based on the TSMC 0.l8㎛ CMOS technology. The chip size is 1.8㎜×1.8㎜. To improve the noise figure of the circuit, SMD components and a bonding wire inductor are applied to input matching. Simulation results show that the S21 parameter is 11.41㏈ and 9.98㏈ at 912㎒ and 2.45㎓, respectively. The noise figure is also determined to 1.25㏈ and 3.08㏈ at the same frequencies with a power consumption of 8.95㎽.