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PECVD에 의한 $\mu$c-Si:H 박막트랜지스터의 제조
문교호,이재곤,최시영 대한전자공학회 1996 전자공학회논문지-A Vol.33 No.5
The .mu.c-Si:H films have been deposited by PeCVD at the various conditions such as hydrogen dilution ratio, substrate temperature and RF power density. Then, we studied their electrical and optical properties. Top gate hydrogenated micro-crystalline silicon thin film transistors($\mu$c-Si:H TFTs) using $\mu$-Si:H and a-SiN:H films have been fabricated by FECVD. The electrical characteristics of the devices have been investigated by semiconductor parameter analyzer and compared with amorphous silicon thin film transistors (a-Si:H TFTs). In this study, on/off current ratio, threshold voltage and the field effect mobility of the $\mu$c-Si:H TFT were $3{\times}10^{4}$, 5.06V and 0.94cm$^{2}$Vs, respectively.
PECVD μc-Si:H 막을 이용한 박막트랜지스터의 제조
문교호,최시영 경북대학교 센서기술연구소 1994 센서技術學術大會論文集 Vol.5 No.1
Top gate μc-Si:H TFTs were fabricated and the electrical charactristics were analyzed using current-voltage measurements. μc-Si:H films were deposited by PECVD at the various condition such as hydrogen dilution ratio, temperature and RF power density. Then we studied their electrical and optical properties. In this study, field effect mobility of TFT was 0.94cm^(2)/Vs and-on/off was ~10^(4) and threashold voltage was 5.06V.
Tree Grammar를 이용한 한글 인식 Algorithm과 Simulation에 관한 연구
李敎鎬,鄭燦義 건국대학교 1985 論文集 Vol.20 No.1
Syntactic pattern recognition is concerned with the application of formal language and automata theory to the modeling and description of structural relationship in pattern classes. In this paper, the recognition of Korean characters is tried with the tree grammar method in various approach of syntactic pattern recognition. A microcomputer, a digisector, and a C.C. TV camera were used as instruments for simulation. The most significant factor that improved recognition-success-ratio was illumination.