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이중층 몰리브데늄을 후면전극으로 적용한 비진공법 CuInSe₂ 태양전지의 특성
황지섭(Ji Sub Hwang),윤희선(Hee-Sun Yun),장윤희(Yoon Hee Jang),이장미(Jang mi Lee),이도권(Doh-Kwon Lee) 한국태양광발전학회 2020 Current Photovoltaic Research Vol.8 No.2
Molybdenum (Mo) thin films are widely used as back contact in copper indium diselenide (CISe) solar cells. However, despite this, there are only few published studies on the properties of Mo and characteristics of CISe solar cells formed on such Mo substrates. In this studies, we investigated the properties of sputter deposited Mo bilayer, and fabricated non-vacuum CISe solar cells using bilayer Mo substrates. The changes in surface morphology and electrical resistivity were traced by varying the gas pressure during deposition of the bottom Mo layer. In porous surface structure, it was confirmed that the electrical resistivity of Mo bilayer was increased as the amount of oxygen bonded to the Mo atoms increased. The resulting solar cell characteristics vary as the bottom Mo layer deposition pressure, and the maximum solar cell efficiency was achieved when the bottom layer was deposited at 7 mTorr with a thickness of 100 nm and the top layer deposited at 3 mTorr with a thickness of 400 nm.