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마그네트론 스퍼터링법으로 증착한 Au 박막의 전기전도특성에 미치는 열처리 온도와 Ta 삽입층의 영향
최혁철,유천열,Choi, Hyeok-Cheol,You, Chun-Yeol 한국진공학회 2007 Applied Science and Convergence Technology Vol.16 No.6
We fabricated thin films of Au and Ta/Au with thicknesses of 30 nm and 5 nm/30nm, respectively on Si(100) or Si(111) substrates using a dc magnetron sputtering system. Grain sizes, roughness and conductivity for Au thin films are measured as a function of the annealing temperatures. We observed that the grain size of samples enlarged and the surface became rougher with increasing annealing temperature. The grain size and roughness were improved in the structure of Si/Ta/Au than Si/Au. Furthermore, the Si(100) substrate was more effective for decreasing the resistance for Ta/Au system than Si(111) substrate. We confirm that by inserting a Ta buffer layer in Si(100)/Au, surface roughness was reduced and by adjusting the annealing temperature the grain size were enlarged. Consequently, the Au thin-film has improved conductivity. 열처리 온도에 따른 Au 결정립 크기의 변화와 표면 거칠기 및 전기전도도를 연구하기 위해 dc 마그네트론 스퍼터링법을 사용하여 Si(111) 또는 Si(100) 기판위에 Au (30nm) 와 Ta (5 nm)/Au (30 nm) 를 증착하였다. 열처리 온도가 증가함에 따라 시료의결정립 크기가 증가하였고, 박막 표면 거칠기 또한 증가함을 확인하였다. Si/Au보다Si/Ta/Au구조에서 결정립 크기가 증가하였고 표면거칠기는 감소되었으며 Si(111)기판보다 Si(100) 기판위의 Ta/Au구조에서 전기 저항이 감소되었다. Si(100)/Au구조에 5 nm 두께의 Ta의 buffer layer를 삽입하여 표면 거칠기 정도를 낮춤과 동시에 열처리 온도를 적절히 조절하여 결정립 크기를 증가시킴으로서 전도성이우수한 양질의 Au 박막을 얻을 수 있었다.
[Pd/Co]<SUB>5</SUB>/FeMn 초격자 다층 박막구조에서 수직 자기이방성과 교환바이어스에 관한 연구
김가언(Ka-Eon Kim),최혁철(Hyeok-Cheol Choi),유천열(Chun-Yeol You) 한국자기학회 2012 韓國磁氣學會誌 Vol.22 No.1
We investigate the exchange bias effect in [Pd/Co]<SUB>5</SUB> superlattice structures which are representative system of the perpendicular magnetic anisotropy. We fabricate Si/[Pd/Co]<SUB>5</SUB>/FeMn structures, and study the exchange bias variations by measuring hysteresis loop variations with thickness of FeMn layer. In order to optimize the perpendicular magnetic anisotropy, we fix the thickness of Pd with 1.1 nm and investigate the dependence of the perpendicular magnetic anisotropy on the ferromagnetic Co layer thickness. As results, we find that the biggest coercivity in 0.3 nm of Co layer without FeMn layer. The biggest exchange bias field is found for 0.3 nm of Co layer when we change the Co thickness with fixed FeMn thickness. When we vary thickness of FeMn layer, the biggest coercivity is found for 5 nm of FeMn layer. No exchange bias is observed when the FeMn layer is thinner than 3 nm, and the exchange bias field increases with FeMn layer thickness continuously up to 15 nm.