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진공열처리 온도에 따른 GZO/Al 적층박막의 구조적, 전기적, 광학적 특성 변화
김선경(Sun-Kyung Kim),김승홍(Seung-Hong Kim),김소영(So-Young Kim),전재현(Jae-Hyun Jeon),공태경(Tae-Kyung Gong),윤대영(DaeYoung Yoon),최동용(DongYong Choi),최동혁(Dong-Hyuk Choi),손동일(Dong-Il Son),김대일(Daeil Kim) 한국표면공학회 2014 한국표면공학회지 Vol.47 No.2
Ga doped ZnO (GZO)/Al bi-layered films were deposited on the glass substrate by RF and DC magnetron sputtering and then vacuum annealed at different temperatures of 100, 200 and 300℃ for 30 minutes to consider the effects of annealing temperature on the structural, electrical and optical properties of the films. For all depositions, the thicknesses of the GZO and Al films were kept constant at 95 and 5 nm, respectively, by controlling the deposition time. As-deposited GZO/Al bi-layered films showed a relatively low optical transmittance of 62%, while the films annealed at 300℃ showed a higher transmittance of 81%, compared to the other films. In addition, the electrical resistivity of the films was influenced by annealing temperature and the lowest resistivity of 9.8 × 10<SUP>?4</SUP> Ωcm was observed in the films annealed at 300℃. Due to the increased carrier mobility, 2.35 ㎠ V<SUP>?1</SUP>S<SUP>?1</SUP> of the films. From the experimental results, it can be concluded that increasing the annealing temperature enhanced the optical and electrical properties of the GZO/Al films.