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      • 운동능력과 학업성적이 초등학생의 인기도에 미치는 영향

        박동근(Park Dong Keun),천인호(Chon In Ho) 한국체육교육학회 1999 한국체육교육학회지 Vol.4 No.1

        The purpose of this study was to find the children`s attitude toward athletic success, academic achievement for popularity. The intent was to contribute to the effective management of Elementary physical education and to develop methods of instruction. The specific objective of this study are followings; to investigate the children`s more popular focters among athletic success academic achievement, posture, economic ability. The subjects(382) were selected from elementary school by stratified cluster sampling method in chongju-city and chong weon rural area. The instruments used for the data collection were the questionnaires made by Oh, Jeong-Yoon. The method of stastics used for investigation was percentage. The implication associated with the findings are following ; 1. Both boys and girls expressed preference toward good academic grades. 2. Children in academically outstanding were more popular than children in success athletically, it was found that outstanding child athletes was more popular to boys than girls while girl ranked grades first. 3. Among 4 factors ; academic, athletic, economic, posture as contributors to popularity, Both boys and girls thought grades first, posture, athlectic, money.

      • 열전대용 Membrane 제작을 위한 단결정 실리콘의 이방성 식각 연구

        천인호 선문대학교 대학원 1999 논문집 Vol.3 No.-

        Three different etching solutions KOH, KOH-IPA and TMAH were used for anisotropic etching for membrane structure formation, single crystal silicon substrate. The etching characteristic was observed for the each solution in this experiment. Also, etching rate depends on the etchant temperature and concentration. The different characteristics were observed according to pattern directions and etchant concentration was measured. The pattern was made to incline 45℃ on the primary flat and the KOH 20w t·%, the etching shape was U-groove above 80℃, and V-groove shape was observed below 80℃. The hillock which was generated at silicon surface was decreased as the etchant temperature and concentration increased. In this experiments, the new membrane structure design and process were introduced for MEMS thermocouple.

      • 적외선 센서를 위한 이방성 식각 기술

        천인호,조남인 선문대학교·중소기업기술지원연구소 1998 선문공대 연구/기술 논문집 Vol.3 No.1

        적외선 센서 제작을 위한 이방성 식각 기술을 조사하였다 단결정 실리콘 기판에 이방성 식각을 하기 위해서 KOH와 TMAH의 서로 다른 두 가지 식각액을 사용하였다. KOH용액은 TMAH용액과 비교하여 녹은 식각율을 보이지만 실리콘 산화막과의 Selectivity는 떨어진다 결론적으로 TMAH는 멤브레인층의 형성과 적외선 흡수체 구조를 만드는데 적당만 용액이다 We report on anisotropic etching technologies for the fabrication Infrared sensors Two different etching solutions were used for the anisotropic etching for single crystal silicon substrates - KOH (potassum hγdroxlde) and TMAH (tetra methγ1 ammonium hγdroxide) KOH presented the higher etching rates compared to TMAH, but has poor selectivity with silicon dioxide It is concluded that TMAH is more suitable solution for the formation of membrane layer on which infrared absorbing strurtures are constructed

      • KOH, KOH-IPA 용액의 이방성 식각 특성 연구

        천인호,김환영 선문대학교 ·중소기업기술지원연구소 1999 선문공대 연구/기술 논문집 Vol.4 No.1

        이방성 습식 식각을 이용하여 멤브레인을 제작하기 위하여 KOH, KOH-lPA의 서로 다른 두 가지 식각액을 사용하여 단결정 실리콘 기판을 이방성으로 식각을 하고, 각 용액에 대한 식각 특성을 관관찰하였다 식각률은 식각액의 온도와 농도에 의존하며, 패턴 형성 방향과 식각액의 농도에 따라 식각 형태가 다르게 나타났다. 패턴은 Primary Flat에 45° 로 기울여 형성되었으며 20wt·% KOH 80℃ 이상에서는 U-groove, 그 이하의 온도와 농도에서는 V-groove 식각 형태를 관찰할 수 있었다. 각 면에 대한 식각률 차이에 의해서 생기는 Hillock은 온도와 농도가 높아짐에 따라 줄어들었고, 재식각을 통하여 현저하게 줄어듦을 알수 있었다. Two different etching solutions, KOH and KOH-lPA, were used for anisotropic etching for membrane structure formation, single crystal silicon substrate. The etching characteristic was observed for the each solution in this experiment. Etching rate depends on the etchant temperature and concentration. The different characteristics were observed according to pattern directions and etchant concentration was measured. The pattern was made to incline 45° on the primary flat and the KOH 20wt·%, the etching shape was U-groove above 80℃, and V-groove shapewas observed below 80℃. The hillock which was generated at silicon surface was decreased as the etchant temperature and concentration increased.

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