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차윤미 ( Cha¸ Yun-mi ) 한국무용교육학회 2021 韓國舞踊敎育學會誌 Vol.32 No.3
This article aims to examine the current status of Korean breaking dance education and the current level, and present domestic university and government-level policy tasks to foster Korean breaking dance education and breaking dancers. The reason why this discussion is necessary is that the breaking education, which is currently underway ahead of the 2024 Paris Olympics, is poor for education to win medals in the Olympics, and a new education program and government-level support are urgently needed. Accordingly, the following suggestions were made by analyzing the review items of the Trivium Value System, which is the breaking screening method of the 2024 Paris Olympics, and analyzing the current status of the breaking education. First, education systems that are suitable for those majoring in breaking should be forstered, not with non-professors in educational institutions. Second, the fundamental concepts needed to establish the identity of the dance, along with an understanding of body mechanisms, should be able to educate the theory of the cultural and philosophical background involved in the dance and to educate the breaking dancers to find their characters. Third, more scientific and organized body training programs are needed to improve the performance of breaking dancers. Fourth, it will help foster professionals for breaking dancers by allowing them to use the general sports town and conduction state-run training every year to provide education programs across age groups and regions, including local dancers and young dancers.
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오창균(Chang-Gyun Oh),차윤미(Yun-Mi Cha),이경남(Gyeong-Nam Lee),정복만(Bok-Mahn Jung),김준동(Joondong Kim) 대한전기학회 2018 전기학회논문지 Vol.67 No.10
A heterojunction SnS₂/p-Si photodetector was fabricated by RF magnetron sputtering system. SnS₂ was formed with 2-inch SnS₂ target. Al was applied as the front and the back metal contacts. Rapid thermal process was conducted at 500℃ to enhance the contact quality. 2D material such as SnS₂, MoS₂ is very attractive in various fields such as field effect transistors (FET), photovoltaic fields such as photovoltaic devices, optical sensors and gas sensors. 2D material can play a significant role in the development of high performance sensors, especially due to the advantages of large surface area, nanoscale thickness and easy surface treatment. Especially, SnS₂ has a indirect bandgap in the single and bulk states and its value is 2 eV-2.6 eV which is considerably larger than that of the other 2D material. The large bandgap of SnS₂ offers the advantage for the large on-off current ratio and low leakage current. The SnS₂/p-Si photodetector clearly shows the current rectification when the thickness of SnS₂ is 80 nm compared to when it is 135 nm. The highest photocurrent is 19.73 μA at the wavelength of 740 nm with SnS₂ thickness of 80 nm. The combination of 2D materials with Si may enhance the Si photoelectric device performance with controlling the thickness of 2D layer.
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