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단위 셀 Reference 저항을 사용한 ReRAM용 Multi-Level Sense Amplifier
조문성(Moonsung Jo),윤홍일(Hongil Yoon) 대한전자공학회 2010 대한전자공학회 학술대회 Vol.2010 No.6
A novel reference resistor scheme is proposed for ReRAM multi-level sense amplifier. Only one ReRAM cell is used as a reference resistor instead of four ReRAM cells. Compared to the conventional scheme, the implementations using the proposed scheme achieve 34% power savings without the increase of read time. Also, the proposed scheme enhances tolerance for the variation of voltage sources, capacitors, and cell resistance.