광자에너지에 의한 TiN-Oxide 박막의 유전율 특성

정천옥,김병인,김창석 조선대학교 에너지.자원신기술연구소 2001 에너지·자원신기술연구소 논문지 Vol.23 No.2

VLSI require thinner dielectric film and also larger capacitance. Most of such VLS I have MOS structures. For the research on this requirement, MOS capacitors were fabricated on the silicon wafer in four different thickness groups by RF sputtering method and investigated on their electrical and optical characteristics by photon energy variation. SiO film is used as the insulating layer and TIN film is chosen as the barrier against the diffusion of Al which is the terminal connected by ohmic contact because TIN has the advantageous properties such as good thermal stability and very low diffusion rate in spite of it's relatively low specific resistance.

SrTiO_3 박막의 유전특성에 미치는 Ti층의 영향

정천옥,김병인,김창석 조선대학교 동력자원연구소 1997 動力資源硏究所誌 Vol.19 No.1

This study makes SrTiO₃ with nonpolarity among ferroelectrics by RF sputtering as dielectric layer, produces thin film of Si/SrTiO₃ and Si/Ti/SrTiO₃ of MOS structure using Ti as buffer layer, measures and examines the electrical features with optical refractive index, absorption coefficient, electric permittivity, photon energy and as a result, ferroelectrics oscillation occurrs by the interaction within a film by light temperature and the absorption coefficient of thin film with Ti as buffer layer is increased. It is found that the peak of electric permittivity value of Ti/SrTiO₃ thin film has low values and is appeared late and as dipole which is found in dielectric is shown, the experiment satisfies the theory. In the nature of electric permittivity by photon energy, imaginary value is higher and current variation slope of thin film of thickness SrTiO₃ has lower values in reverse bias.

광자에너지에 의한 TiN-Oxide 박막의 유전율 특성

정천옥,김병인,김창석 조선대학교 생산기술연구소 1997 生産技術硏究 Vol.19 No.1

VLSI require thinner dielectric film and also larger capacitance. Most of such VLSI have MOS structures. For the research on this requirement, MOS capacitors were fabricated on the silicon wafer in four different thickness groups by RF sputtering method and investigated on their electrical and optical characteristics by photon energy variation. SiO film is used as the insulating layer and TiN film is chosen as the barrier against the diffusion of Al which is the terminal connected by ohmic contact because TiN has the advantageous properties such as good thermal stability and very low diffusion rate in spite of it's relatively low specific resistance.

SrTiO₃ 박막의 유전특성에 미치는 Ti층의 영향

정천옥,김병인,김창석 조선대학교 에너지.자원신기술연구소 2001 에너지·자원신기술연구소 논문지 Vol.23 No.2

This study makes SrTiO₃with nonpolarity among ferroelectrics by RF sputtering as dielectric layer, produces thin film of Si+SrTiO₃and Si+Ti+SrTiO₃of MOS structure using Ti as buffer layer, measures and examines the electrical features with optical refractive index, absorption coefficient, electric permittivity, photon energy and as a result, ferroelectrics oscillation occurrs by the interaction within a film by light temperature and the absorption coefficient of thin film with Ti as buffer layer is increased. It is found that the peak of electric permittivity value of Ti+SrTiO₃thin film has low values and is appeared late and as dipole which is found in dielectric is shown, the experiment satisfies the theory. In the nature of electric permittivity by photon energy, imaginary value is higher and current variation slope of thin film of thickness SrTiO₃has lower values in reverse bias.

PbTiO₃강유전체 박막의 유전율 특성

김창석,정천옥,김병인 조선대학교 에너지.자원신기술연구소 1999 에너지·자원신기술연구소 논문지 Vol.21 No.2

This paper evaporates PbTiO_(3) layer thickness differently with RF sputtering method on Si Wafer(n-100). This study is performed to examine the characteristics of electric constant, photon energy and dielectric loss according to the thickness of PbTiO_(3) and increase the reliability and reproduction of PbTiO_(3) thin film. It is confirmed that the variation of electric constant by frequency resulted from the formation of particles within thin film, the particle size and the polarization on grain boundary. In conclusion dielectric loss depends on the value of imaginary number (ε_(2)), polarizability falls zero(0) by resonance absorption and is close to 0 of tanδ value and Q value of dielectric loss.

PbTiO₃ 강유전체 박막의 유전율 특성

김창석,정천옥,김병인 조선대학교 에너지.자원신기술연구소 2001 에너지·자원신기술연구소 논문지 Vol.23 No.2

This paper evaporates PbTiO₃layer thickness differently with RF sputtering method on Si Wafer(n-100). This study is performed to examine the characteristics of electric constant, photon energy and dielectric loss according to the thickness of PbTiO₃and increase the reliability and reproduction of PbTiO₃thin film. It is confirmed that the variation of electric constant by frequency resulted from the formation of particles within thin film, the particle size and the polarization on grain boundary. In conclusion dielectric loss depends on the value of imaginary number (ε2), polarizability falls zero(o) by resonance absorption and is close to 0 of tan8 value and Q value of dielectric loss.

SrTiO₃ 박막의 C-V특성에 미치는 Ti층의 영향

김병인,정천옥,이상일 조선대학교 에너지.자원신기술연구소 1997 에너지·자원신기술연구소 논문지 Vol.19 No.2

This study makes SrTiO₃with nonpolarity among ferroelectrics by RF sputtering as dielectric layer, produces thin film of Si/SrTiO₃/Al and Si/Ti/SrTiO₃/Al of MOS structure using Ti as buffer layer, measures and examines the electrical features with C-V as a result, ferroelectrics oscillation occurrs by the interaction within a crystal by light temperature and the absorption of thin film with Ti as buffer layer is increased. It is found that the peak of permittivity value of Ti/SrTiO₃thin film has low values and is appeared late and as dipole which is found in dielectric is shown, the experiment satisfies the theory. The thicker thin film is, the lower capacitance value can be and saturation is delayed, so the experimental results satisfy the general capacitance.

SrTiO₃ 박막 제작과 Photon Energy 특성

정수복,정천옥,김병인 조선대학교 에너지.자원신기술연구소 1997 에너지·자원신기술연구소 논문지 Vol.19 No.2

SrTiO₃with nonpolarity among ferroelectrics by RF sputtering as dielectric layer. produces thin film of Si/SrTiO₃and Si/Ti/SrTiO₃of MOS structure using Ti as buffer layer. measures and examines the electrical features with optical photon energy ferroelectrics oscillation occurs by the interaction within a crystal by light temperature and the absorption of thin film with Ti as buffer layer is increased. It is found that the peak of dielectric constant value of Ti/SrTiO₃thin film has low values and is appeared late and as dipole which is found in dielectric is shown, the experiment satisfies the theory. In the nature of dielectric constant by photon energy, imaginary value is higher and current variation slope of thin film of thick SrTiO₃has lower values in reverse bias.

SiO/TiN 박막의 증착두께에 따른 유전율 특성

김창석,이우선,정천옥,김병인 조선대학교 에너지.자원신기술연구소 2001 에너지·자원신기술연구소 논문지 Vol.23 No.2

In these days, the thinner film of dielectric materials is required while it's capacitance is required to be still large at the VLSI process. Most of such VLSI have MOS structures. For the research on this requirement, MOS capacitors were fabricated on the silicon wafer in four different thickness groups by RF sputtering method. SiO of the SiO/TiN film is used as the insulating layer and TIN is chosen as the barrier against the diffusion of Al which is the terminal connected by ohmic contact because TIN has the advantageous properties such as good thermal stability and very low diffusion rate in spite of it's relatively low specific resistance. In this study their electrical and optical characteristics are investigated to find refractive index, absorption coefficient and Permittivity.

TiN이 증착된 SiO/TiN 박막의 전압-전류 특성

송찬일,김창석,정천옥,김병인 조선대학교 에너지.자원신기술연구소 2001 에너지·자원신기술연구소 논문지 Vol.23 No.2

In this study, the evaporation of SiO layers with different thickness on Si wafer(n-100) is conducted by using the RF sputtering method. Thin films are made with the structure of Si/SiO and Si/SiO/TiN by evaporating TIN which is used as a diffusion barrier of non-resistant superintegrated semiconductor circuit. The research is performed to increase the I-V characteristics depending upon the SiO thickness and the reliability and reproducibility of the TiN thin film. It is shown that, since the TiN is diffused into SiO surface and fosters the potential barrier highly in the SiO/TiN thin film, the saturation voltage appears after the SiO thin film does. The thicker the SiO film becomes, the weaker the current variation does and the less leakage current the TIN deposited thin film has. The leakage current variation with a little slope is found in the negative voltage zone due to the effect of the trap state density near the electrode. The spiking which occurs when the film is too very thin can be reduced by adding TIN. The stability can be obtained due to no pervasion of A1 into SiO. The experimental result matches the Ohm's law and satisfies the equation of current.