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정확환 Field Enhancement Factor를 고려하여 트랩 종류에 따른 트랩사이 거리 추출
전현옥(Hyunok Jeon),유성원(Sung-Won Yoo),이현슬(Hyunseul Lee),서영수(Youngsoo Seo),전상빈(Sangbin Jeon),고형우(Hyungwoo Ko),고결(Kyul Ko),신형철(Hyungcheol Shin) 대한전자공학회 2015 대한전자공학회 학술대회 Vol.2015 No.6
The characteristics of oxide slow trap was extracted from gate-induced drain leakage (GIDL) random telegraph noise (RTN) measurement. The ratio of trap-assisted tunneling (TAT) GIDL current before and after carrier capture into the slow trap was derived with consideration to the type of slow trap. And, the distance between fast and slow trap was extracted and compared in case of acceptor-like and donor-like trap based on the measurement and equations derived from the accurate field enhancement factor. Finally, the relative positions of the two trap can be determined at the gate-to-drain overlap region with consideration to the type of slow trap.