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고효율 결정질 실리콘 태양전지 적용을 위한 실리콘 산화막 표면 패시베이션
전민한,강지윤,박철민,송진수,이준신,Jeon, Minhan,Kang, Jiyoon,Balaji, Nagarajan,Park, Cheolmin,Song, Jinsoo,Yi, Junsin 한국전기전자재료학회 2016 전기전자재료학회논문지 Vol.29 No.6
Minimizing the carrier recombination and electrical loss through surface passivation is required for high efficiency c-Si solar cell. Usually, $SiN_X$, $SiO_X$, $SiON_X$ and $AlO_X$ layers are used as passivation layer in solar cell application. Silicon oxide layer is one of the good passivation layer in Si based solar cell application. It has good selective carrier, low interface state density, good thermal stability and tunneling effect. Recently tunneling based passivation layer is used for high efficiency Si solar cell such as HIT, TOPCon and TRIEX structure. In this paper, we focused on silicon oxide grown by various the method (thermal, wet-chemical, plasma) and passivation effect in c-Si solar cell.