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이종접합 Gate 구조를 갖는 수평형 NiO/Ga<sub>2</sub>O<sub>3</sub> FET의 전기적 특성 연구
이건희 ( Geon-hee Lee ),문수영 ( Soo-young Moon ),이형진 ( Hyung-jin Lee ),신명철 ( Myeong-cheol Shin ),김예진 ( Ye-jin Kim ),전가연 ( Ga-yeon Jeon ),오종민 ( Jong-min Oh ),신원호 ( Weon-ho Shin ),김민경 ( Min-kyung Kim ),박철환 ( 한국전기전자재료학회 2023 전기전자재료학회논문지 Vol.36 No.4
Gallium Oxide (Ga<sub>2</sub>O<sub>3</sub>) is preferred as a material for next generation power semiconductors. The Ga<sub>2</sub>O<sub>3</sub> should solve the disadvantages of low thermal resistance characteristics and difficulty in forming an inversion layer through p-type ion implantation. However, Ga<sub>2</sub>O<sub>3</sub> is difficult to inject p-type ions, so it is being studied in a heterojunction structure using p-type oxides, such as NiO, SnO, and Cu<sub>2</sub>O. Research the lateral-type FET structure of NiO/Ga<sub>2</sub>O<sub>3</sub> heterojunction under the Gate contact using the Sentaurus TCAD simulation. At this time, the VG-ID and VD-ID curves were identified by the thickness of the Epi-region (channel) and the doping concentration of NiO of 1 × 10<sup>17</sup> to 1 × 10<sup>19</sup> cm<sup>-3</sup>. The increase in Epi region thickness has a lower threshold voltage from -4.4 V to -9.3 V at I<sub>D</sub> = 1 × 10<sup>-8</sup> mA/mm, as current does not flow only when the depletion of the PN junction extends to the Epi/Sub interface. As an increase of NiO doping concentration, increases the depletion area in Ga<sub>2</sub>O<sub>3</sub> region and a high electric field distribution on PN junction, and thus the breakdown voltage increases from 512 V to 636 V at I<sub>D</sub> =1 × 10<sup>-3</sup> A/mm.