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3차원 플래시 메모리의 전하 손실 원인 규명을 위한 Activation Energy 분석
양희훈,성재영,이휘연,정준교,이가원 한국반도체디스플레이기술학회 2019 반도체디스플레이기술학회지 Vol.18 No.2
The reliability of 3D NAND flash memory cell is affected by the charge migration which can be divided into the vertical migration and the lateral migration. To clarify the difference of two migrations, the activation energy of the charge loss is extracted and compared in a conventional square device pattern and a new test pattern where the perimeter of the gate is exaggerated but the area is same. The charge loss is larger in the suggested test pattern and the activation energy is extracted to be 0.058 eV while the activation energy is 0.28 eV in the square pattern.