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한중 환경에서 정제된 급결제를 혼입한 플라이애시 콘크리트의 특성
이용수,류재석,Lee, Yong-Soo,Ryou, Jae-Suk 한국건설순환자원학회 2014 한국건설순환자원학회 논문집 Vol.2 No.1
Although the accelerators are used at the early stage to control setting-time and strength of concrete when cold-weather concrete is utilized, no security of workability occurs because the early hydration makes them react rapidly. Therefore, the tablet used in previous study is applied in this study. In particular, because a small amount of fly-ash being replaced in cold weather concrete of domestic, fly-ash concrete incorporating the tablet is discussed in workability by elapsed time, early strength to ensure the development of adequate strength, and freezing-thawing resistance. As a result, both 0.5 and 1.0% tablets were found to be superior. Thus, it was verified in cold weather concrete incorporating fly-ash that workability can be secured, as well as the development of early strength to prevent early frost. 본 연구에서는 한중 콘크리트 타설시 발생되는 초기동해로 인한 피해를 방지하고 조강성을 향상시키기 위하여 기존 연구에서 이용된 정제(Tablet)화된 급결제를 사용 하였다. 특히 국내에서는 한중 콘크리트라고 해도 적은양의 플라이애시가 치환되고 있으므로 이러한 Tablet을 플라이애시 치환 콘크리트에 혼입하여 workability, early strength 및 동결융해 저항성을 비교 확인하였다. 그 결과 Tablet 0.5%, 1.0%가 가장 좋은 결과를 나타내어 일정시간 동안 작업시간 확보가 가능하며 초기동해 및 조기강도 특성을 증진 시킬 뿐만 아니라 높은 동결융해 저항성 및 내구성 지수를 가지고 있어 한중 콘크리트로의 적용이 가능하다는 것을 확인하였다.
이용수,이용현,손병기,Lee, Yong-Soo,Lee, Yong-Hyun,Sohn, Byung-Ki 대한전자공학회 1988 전자공학회논문지 Vol. No.
Thermally grown $SiO_2$ films on silicon have been thermally nitrided in the $NH_3$ gas ambient and their properties have been investigated by analyzing the AES data and the results of the I-V and the C-V measurements. The Auger depth profile show that the nitrogen-rich layers are formed at the nitrided oxide film surface and near the $SiO_2$-Si interface. The higher the nitridation temperature is, the larger the refractive index of nitroxide film is. And the thinner the oxide film to be nitrided for the same nitridation temperature is, the larger the refractive index of nitroxide film is. When thin $SiO_2$ film is thermally nitrided, the I-V characteristics show the Fowler-Nordheim conduction fashion. Flatband voltages of $SiO_2$ films are shifted by nitridation, due to the fixed charge formation.