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NiSi₂/Si, Cosi₂/Si (111) 계면의 전자구조 연구
金玟機,吳榮基,李根雨,趙和錫,朴辰鎬 嶺南大學校 基礎科學硏究所 1991 基礎科學硏究 Vol.11 No.-
In recent years the electronic properties of transition metal silicides have received great attention due to their use in the integrated circuits for schottky barriers. Ohmic contacts, etc. In order to obtain the electronic structure and the electrical properties, some experimental and theoretical studies of bulk disilicides have been carried out. However, because of the structural complexity of metal silicide, detail theoretical studies are rather difficult and there still remains some problems to be solved. In this study, the density of states, structural energies, charge transfers, and Schottky barrier heights of NiSi₂/Si (111) and CoSi₂/Si (111) interfaces are calculated using the tight-binding model and the recursion method. In NiSi₂/Si and CoSi₂/si interface, the interface states are dominated by the states transverse to the interface. Also, the NiSi₂/Si 7A and CoSi₂/Si 8B type interfaces have the lowest structural energies for each types, and the Schottky barrier heights are 0.842 eV for NiSi₂/Si 7A, 0.930 eV for CoSi₂/Si 8B.