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Nguyen An Hoang-Thuy,Nguyen Manh-Cuong,응웬안위,Yim Ji-Yong,Kim Jeong-Han,Park No-Hwal,Jeon Seung-Joon,Kwon Daewoong,최리노 나노기술연구협의회 2022 Nano Convergence Vol.9 No.45
The effects of the grain size of Pt bottom electrodes on the ferroelectricity of hafnium zirconium oxide (HZO) were studied in terms of the orthorhombic phase transformation. HZO thin films were deposited by chemical solution deposition on the Pt bottom electrodes with various grain sizes which had been deposited by direct current sputtering. All the samples were crystallized by rapid thermal annealing at 700 °C to allow a phase transformation. The crystallographic phases were determined by grazing incidence X-ray diffraction, which showed that the bottom electrode with smaller Pt grains resulted in a larger orthorhombic phase composition in the HZO film. As a result, capacitors with smaller Pt grains for the bottom electrode showed greater ferroelectric polarization. The smaller grains produced larger in-plane stress which led to more orthorhombic phase transformation and higher ferroelectric polarization.
Double-gate thin film transistor with suspended-gate applicable to tactile force sensor
Nguyen An Hoang-Thuy,Nguyen Manh-Cuong,조성용,응웬안위,김혜원,Seok Yeongcheol,윤지연,최리노 나노기술연구협의회 2020 Nano Convergence Vol.7 No.31
This paper presents a straightforward, low-cost, and effective integration process for the fabrication of membrane gate thin film transistors (TFTs) with an air gap. The membrane gate TFT with an air gap can be used as the highly sensitive tactile force sensor. The suspended membrane gate with an air gap as the insulator layer is formed by multiple photolithography steps and photoresist sacrificial layers. The viscosity of the photoresist and the spin speed was used to modify the thickness of the air gap during the coating process. The tactile force was measured by monitoring the drain current of the TFT as the force changed the thickness of the air gap. The sensitivity of the devices was enhanced by an optimal gate size and low Young’s modulus of the gate material. This simple process has the potential for the production of small, versatile, and highly sensitive sensors.