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칩 면적에 따른 GaN-기반 청색 LED 칩의 조도 및 배광분포의 특성 분석
윤석범(Soek-Beom Yoon),류장렬(Jang-Ryeol Ryu) 한국정보기술학회 2011 한국정보기술학회논문지 Vol.9 No.4
The interest for LEDs display and illumination applications has been growing steadily over the past few years. In order to make a high efficiency, it must superior in light distribution and intensity of illumination according to chip size based on the good technology of epi-layer, surface roughness, PSS and optimum chip design. In this study, we have reported that the optimum design and specialized process could to improve the characteristics of LED chip. After that, their performances were measured. It was showed the forward supply voltage of 3.03V∼3.18V, maximum intensity of illumination of 3.0x10<SUP>-3</SUP>W/㎡ by chip size 14mil and 1,000 time intensity of illumination by chip size 24mil more than 14mil.
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류장렬(Jang-Ryeol Ryu),윤석범(Soek-Beom Yoon) 한국정보기술학회 2010 한국정보기술학회논문지 Vol.8 No.7
Solid-state lighting based on LED is an emerging technology with potential to greatly exceed the efficiency of traditional lamp-based lighting system. The interest for LEDs display and illumination applications has been growing steadily over the past few years. LEDs are using widely in a field of illumination, lighting source of medical instrument, LCD LED backlight, mobile and traffic signals because they have several merits, such as low power consumption, long lifetime, high brightness, fast response, environment friendly. In order to make a high efficiency, it must the good technology of epitaxial layer, surface roughness, patterned sapphire substrate(PSS) and optimum chip design. In this study, we have reported that the optimum design and specialized process could improve the characteristics of LED chip, those are, area of lighting emitting, output power, supplied voltage. After that, their performances were measured. It was showed an 11.8% increase of the lighting emitting area, output power of 45.37㎽ and supplied voltage of 3.26V by using the Laser Scribe break technique. It will be used the lighting source of a medical equipment and LCD LED TV with high performance of GaN-based LED TV via GaN-based LED with high performance of chip.
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의료기기에 사용하는 LED의 배열방식에 따른 성능 분석
류장렬(Jang-Ryeol Ryu),윤석범(Soek-Beom Yoon) 한국정보기술학회 2011 한국정보기술학회논문지 Vol.9 No.4
The lighting source based on LED is an emerging technology with potential to greatly exceed the efficiency of traditional lamp-based lighting system. LEDs are using widely in field of illumination, lighting source of medical instrument, LCD LED backlight, mobile and traffic signals because they have several merits, such as low power consumption, long lifetime, high brightness, fast response, environment friendly. Especially, in order to apply medical instrument, it must have the good technology of uniformity, intensity illumination and wavelength according to LED optimum array method along with high efficiency. In this study, we have reported that the various RGB LED array and optimum design could improve the characteristics of wavelength and uniformity of illumination according to LED array method, those are, stripe, mosaic, delta array through cylindrical type. After that, their performances were measured. It was showed the intensity of illumination of 2.51xe-4[W/㎟], excellent optical uniformity through the cylindrical LED array structure of mosaic type and 10㎜ distance from LED to LED. It willl be used the lighting source of the medical equipment.
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이승연(Seung-Youn Lee),류장열(Jang-Ryeol Ryu),윤석범(Soek-Beom Yoon) 한국정보기술학회 2011 한국정보기술학회논문지 Vol.9 No.5
GaN-based LED with 450㎚ wavelength was fabricated. It was found that we can achieve much better current spreading by inserting an insulating SiO2 layer between the P-GaN layer and the p-pad electrode. It was also found that we can enhance light output intensity by 10%. In addition, The fabricated LED by using variable width and diameter of the insulating layer was a different characteristics. The diameter and width of an insulating layer is 105㎛/12㎛ and 100㎛/6㎛. As a result, the highest light output of the LED with diameter/width (100㎛/6㎛) average value was 445mcd. The average foward applid voltage was 3.2V ~ 3.5V.
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