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Fe - Ni - C 합금의 고온물성에 미치는 가공열처리의 영향
안행근,이규복,김학신 ( H . K . Ahn,K . B . Lee,H . S . Kim ) 한국열처리공학회 1998 熱處理工學會誌 Vol.11 No.2
N/A The effect of thermomechanical treatment on thermal expantion and melting point of Fe-30%Ni-0.35%C alloy was investigated. The dimention changes of the ausformed martensite and the marformed martensite were decreased with increasing deformation degree in the range of 25∼350℃ prior to reverse transformation but became larger in the range of 500∼800℃ after the reverse transformation. The dimension change and the thermal expansion coefficient were reduced in the order of the deformed austenite, the marformed martensite and the ausformed martensite in the range of 25∼800℃. Therefore, the ausforming treatment is more effective than the marforming treatment in improving the heat-resistance. The melting points of the deformed austenite, the ausformed martensite and the marformed martensite were lowered as either the heating rate or the degree of deformation was increased.
양영신,Lee Woon Jang,이민희,이인환,이철로,안행근,김종수,조형균,Chang Myung Lee,김진수 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.54 No.4
We present the effect of an n-InGaN electron reservoir layer (ERL) on the optical and the elec- trical properties of InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs). The optical and the electrical properties of the LED samples were investigated by using photolumi- nescence (PL), time-resolved PL (TRPL) and electroluminescence (EL) spectroscopy. The carrier lifetimes for the LED samples with the ERL structure were relatively longer than that for the LED sample without the ERL (reference sample). For an InGaN/GaN MQWs separated from the ERL structure by a 30-A-thick GaN tunnel barrier, the decay time was 9.2 ns at 12 K, which was 1.23 times longer than that of the reference sample. Also, the light-output power for the LED with the ERL structure having a 20-A-thick GaN tunnel barrier was 1.15 times stronger than that of the reference LED. The relatively longer carrier lifetime and the increase in the light-output power for the LED sample with the ERL structure can be attributed to the reduced electron overflowing, resulting in a decreased nonradiative recombination rate of the carriers in the InGaN/GaN MQW region.
Ti-Ni-B 형상기억합금의 마르텐사이트변태 및 인장변형거동에 미치는 열처리의 영향
이오연,박영구,안행근 ( O . Y . Lee,Y . K . Park,H . K . Ahn ) 한국열처리공학회 1995 熱處理工學會誌 Vol.8 No.1
The purpose of this study is to investigate the effect of heat treatments on the martensitc transformation and tensile deformation behavior in Ti-Ni-B alloys with various boron concentration. Three types of heat treatment are given to the specimens; i) solution treatment ii) aging iii) thereto-mechanical treatment. In solution treated specimens, R-phase transition which is related to abnormal increase of electrical resistance prior to martensitic transformation has been formed at a boron content of 0.2at% and the M, temperature has been decreased with the increasing of boron content. However, It has not been affected by aging, while that of thereto-mechanically treated specimens has been remarkably increased in the vicinity of recrystallization temperature. The thereto-mechanically treated specimen has showed a good thermal fatigue characteristics, shape memory effect and superelasticity in comparison with the solution treated specimen.
Sn-4.0wt%Ag-0.5wt%Cu 솔더 접합계면의 강도특성과 미세파괴거동에 대한 In-situ관찰
이경근,최은근,추용호,김진수,이병수,안행근,Lee, Kyung-Keun,Choi, Eun-Geun,Chu, Yong-Ho,Kim, Jin-Soo,Lee, Byung-Soo,Ahn, Haeng-Keun 한국재료학회 2008 한국재료학회지 Vol.18 No.1
The micro-structural changes, strength characteristics, and micro-fractural behaviors at the joint interface between a Sn-4.0wt%Ag-0.5wt%Cu solder ball and UBM treated by isothermal aging are reported. From the reflow process for the joint interface, a small amount of intermetallic compound was formed. With an increase in the isothermal aging time, the type and amount of the intermetallic compound changed. The interface without an isothermal treatment showed a ductile fracture. However, with an increase in the aging time, a brittle fracture occurred on the interface due mainly to the increase in the size of the intermetallic compounds and voids. As a result, a drastic degradation in the shear strength was observed. From a microshear test by a scanning electron microscope, the generation of micro-cracks was initiated from the voids at the joint interface. They propagated along the same interface, resulting in coalescence with neighboring cracks into larger cracks. With an increase in the aging time, the generation of the micro-structural cracks was enhanced and the degree of propagation also accelerated.
MBE법으로 성장시킨 InxGa₁_xAs (x=0.02) 에피층에서의 Photo reflectance에 관한 연구
김인수(In-Soo Kim),이정열(Jung-Yeul Lee),배인호(In-Ho Bae),김상기(Sang-Ki Kim),안행근(Haeng-Keun Ahn),박성배(Sung-Bae Park) 한국진공학회(ASCT) 1996 Applied Science and Convergence Technology Vol.5 No.2
반절연성 GaAs(100) 위에 Molecular Beam Epitaxy(MBE)법으로 In의 조성을 0.02으로 일정하게 하여 성장시킨 In_xGa_(1-x)As/GaAs의 photoreflectance(PR) 스펙트럼 특성을 측정하였다. 기판과 에피층의 PR 신호가 분리되어 관측되었으며, 띠간격 에너지 (E。)는 약 1.40eV로써 Pan의 식에 fitting한 결과 약 8meV의 차이가 생겼다. 이는 에피층과 기판의 격자부정합(lattice mismatch)으로 인해 파생되는 계면에서의 응력 (stress)이 그 요인으로 이것이 시료 성장시 결정성에 영향을 미치고 있음을 확인할 수 있었다. 또한, ln_(0.02)Ga_(0.98)As 에피층은 온도 의존도가 낮고 광흡수 효율이 크며 200K 이상의 온도에서 활성화되는 것으로 분석되었고, 성장 온도보다 낮은 온도 400℃로 열처리시킨 경우에 PR 신호 분리가 가장 뚜렷하였으며, 이때 결정성 또한 향상됨을 알았다. We measured photoreflectance spectrum characteristics of InGaAs grown by MBE method on semi-insulating GaAs. The PR signal splitting of substrate and epilayer was observed. The band gap energy was about 1.40 eV. It make to 8 meV difference when it is fitted by Pan's equation. The reason is stress on the interface, which is due to lattice mismatch between epilayer and substrate. We became to know that reason influence crystalline on growing sample. In InGaAs epilayer, temperature dependency is low. The efficiency of photo absorption is high and activate over 200K. In this case when it is annealed at 400℃ below growing temperature, PR signal splitting is remarkable and crystalline is inhanced.
1×1 mm<sup>2</sup> 대면적 녹색 LED의 전기 광학적 특성 분석
장이운,조동섭,전주원,안태영,박민주,안병준,송정훈,곽준섭,김진수,이인환,안행근,Jang, L.W.,Jo, D.S.,Jeon, J.W.,Ahn, Tae-Young,Park, M.J.,Ahn, B.J.,Song, J.H.,Kwak, J.S.,Kim, Jin-Soo,Lee, I.H.,Ahn, H.K. 한국진공학회 2011 Applied Science and Convergence Technology Vol.20 No.4
본 논문은 InGaN/GaN 다중양자우물 구조를 가지는 녹색 발광다이오드의 활성층 내 인듐(In) 조성비와 piezoelectric field에 대한 전계 흡수 현상을 연구하였다. 활성층 내 결정학적 성질과 In 조성비는 double crystal X-ray diffraction 측정으로 분석하였으며, $1{\times}1\;mm^2$ 대면적 칩을 제작하여 발광특성을 조사하였다. 또한, 활성층 내 piezoelectric field는 electro-reflectance spectroscopy로부터 측정한 compensation voltage를 이용해 계산하였고, 인가전압에 따른 photocurrent의 변화를 측정함으로써 녹색 발광 소자의 전기 광학적 특성을 분석하였다. We investigated the effects of piezoelectric field on the electro-absorption characteristics in InGaN/GaN multiple-quantum well (MQW) green light emitting diodes (LED). Double crystal X-ray diffraction measurement was performed to study the crystalline property and indium (In) composition in the MQW active layer. To measure the electro-luminescence and electro-reflectance (ER) spectroscopy, we fabricated the $1{\times}1\;mm^2$ large-area green LED chip. The piezoelectric field inside the LED structure was evaluated from the Vcomp in active layer by the ER spectra. Finally, we analyzed the electro-absorption characteristics of the green LED by using the photo-current spectroscopy.
1×1 ㎟ 대면적 녹색 LED의 전기 광학적 특성 분석
장이운(L. W. Jang),조동섭(D. S. Jo),전주원(J. W. Jeon),안태영(Tae-Young Ahn),박민주(M. J. Park),안병준(B. J. Ahn),송정훈(J. H. Song),곽준섭(J. S. Kwak),김진수(Jin-Soo Kim),이인환(I. -H. Lee),안행근(H. K. Ahn) 한국진공학회(ASCT) 2011 Applied Science and Convergence Technology Vol.20 No.4
본 논문은 InGaN/GaN 다중양자우물 구조를 가지는 녹색 발광다이오드의 활성층 내 인듐(In) 조성비와 piezoelectric field에 대한 전계 흡수 현상을 연구하였다. 활성층 내 결정학적 성질과 In 조성비는 double crystal X-ray diffraction 측정으로 분석하였으며, 1×1 ㎟ 대면적 칩을 제작하여 발광특성을 조사하였다. 또한, 활성층 내 piezoelectric field는 electro-reflectance spectroscopy로부터 측정한 compensation voltage를 이용해 계산하였고, 인가전압에 따른 photocurrent의 변화를 측정함으로써 녹색 발광 소자의 전기 광학적 특성을 분석하였다. We investigated the effects of piezoelectric field on the electro-absorption characteristics in InGaN/GaN multiple-quantum well (MQW) green light emitting diodes (LED). Double crystal X-ray diffraction measurement was performed to study the crystalline property and indium (In) composition in the MQW active layer. To measure the electro-luminescence and electro-reflectance (ER) spectroscopy, we fabricated the 1×1 ㎟ large-area green LED chip. The piezoelectric field inside the LED structure was evaluated from the Vcomp in active layer by the ER spectra. Finally, we analyzed the electro-absorption characteristics of the green LED by using the photo-current spectroscopy.