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권오균,김남제,박미란,김태수,안신모,Kwon, O Kyun,Kim, Namje,Park, Miran,Kim, Tae Soo,An, Shinmo 한국전자통신연구원 2020 전자통신동향분석 Vol.35 No.4
The world's first 5G commercial service started in Korea in April 2019. This makes us proud of our status as an ICT powerhouse, and of the domestic optical network industry ecosystem that has served as a lever to make this significant leap forward in technological and industrial competitiveness. Above all, Japan's trade regulations on core parts and the COVID-19 pandemic have led to new changes across cultures, societies, and economies, and 5G networks have become important. The relevant technology for core material parts is a major concern not only of a few industries, but an entire section of society in terms of national competitiveness. In this article, we discuss the role of industries through the analysis of prospects of optical component technology with regard to the changes in the economic and social paradigm caused by the COVID-19 pandemic and Japan's export regulations.
김호성,김덕준,김동철,고영호,김갑중,안신모,한원석,Kim, H.S.,Kim, D.J.,Kim, D.C.,Ko, Y.H.,Kim, K.J.,An, S.M.,Han, W.S. 한국전자통신연구원 2021 전자통신동향분석 Vol.36 No.3
Two main technologies of III-V/Si laser diode for optical communication, direct epitaxial growth, and wafer bonding were studied. Until now, the wafer bonding has been vigorously studied and seems promising for the ideal III-V/Si laser. However, the wafer bonding process is still complicated and has a limit of mass production. The development of a concise and innovative integration method for silicon photonics is urgent. In the future, the demand for high-speed data processing and energy saving, as well as ultra-high density integration, will increase. Therefore, the study for the hetero-junction, which is that the III-V compound semiconductor is directly grown on Si semiconductor can overcome the current limitations and may be the goal for the ideal III-V/Si laser diode.
김동욱,정흥순,전상철,박상현,유동은,김기남,안신모,이일항,김경헌 한국광학회 2013 Current Optics and Photonics Vol.17 No.5
We present an experimental and numerical study of spectral profiles of effective group indices of hydrogenated amorphous silicon (a-Si:H) waveguides and of their chromatic-dispersion effect on the four-wave-mixing (FWM) signal generation. The a-Si:H waveguides of 220-nm thickness and three different widths of 400, 450 and 500 nm were fabricated by using the conventional CMOS device processes on a 2-μm thick SiO2 bottom layer deposited on 8-inch Si wafers. Mach-Zehnder interferometers (MZIs) were formed with the a-Si:H waveguides, and used for precise measurement of the effective group indices and thus for determination of the spectral profile of the waveguides’ chromatic dispersion. The wavelength ranges for the FWM-signal generation were about 45, 75 and 55 nm for the 400-, 450- and 500-nm-wide waveguides, respectively, at the pump wavelength of 1532 nm. A widest wavelength range for the efficient FWM process was observed with the 450-nm-wide waveguide having a zero-dispersion near the pump wavelength.