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메탈 웨이퍼 본딩과 epitaxial lift-off 방법을 이용한 Si 기판 위 InAs/GaAs 양자점 적외선 수광소자 제작
김호성(HoSung Kim),안승엽(Seung-Yeop Ahn),김상현(SangHyeon Kim),류근환(GeunHwan Ryu),최원준(Won Jun Choi),박정호(Jung Ho Park) 대한전자공학회 2017 대한전자공학회 학술대회 Vol.2017 No.6
We report the fabrication of quantum dot infrared photodetectors (QDIPs) on silicon (Si) substrates by means of metal wafer bonding and an epitaxial lift-off process. According to the photoluminescence (PL) and x-ray diffraction measurements, the QDIP layer was transferred onto the Si substrate without degradation of the crystal quality or residual strain. In addition, from the PL results, we found that an optical cavity was formed because Pt/Au of the bonding material was served as the back mirror and the facet of the GaAs/air was served as the front mirror. The device performance capabilities were directly compared and peak responsivity was enhanced by nearly twofold from 0.038 A/W to 0.067 A/W.