http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : 신희갑 (검색결과 2 건)
- 무료
- 기관 내 무료
- 유료
-
[전기·전자] ABS/TCS 개발을 위한 자료 획득 시스템 개발
신희갑(Hee-Gab Shin),한정훈(Jeong-Hoon Han) 한국자동차공학회 1999 한국자동차공학회 춘 추계 학술대회 논문집 Vol.1999 No.11_2
This paper describes a powerful. easy-to-use. potable data acquisition system (LOGGER) for ABS and TCS developments. The system is specially designed to support in-vehicle test of ABS and to acquire different kinds of data such as internal logic variables, vehicle driving characteristics, break pressures, and driver's manipulating conditions.<br/> The system receives internal variables from ABS and TCS ECU by using CAN, which results in reducing the number of needed wires and lengthening a required distance to communicate with ECU, keeping the communication speed high. The acquired data are transmitted to PC in real time and they are analyzed in details by using a PC-based software (ABSVIEW).<br/> The system can be mainly applied to developments and evaluations of control algorithm and failsafe software for ABS and TCS<br/>
-
서용진,신희갑,이철인,장의구 중앙대학교 기술과학연구소 1994 기술과학연구소 논문집 Vol.24 No.-
In the manufacturing of VLSI circuits, variations of device characteristics due to the slight differences in process parameters drastically aggravate the performances of fabricated devices. Therefore, it is very important to establish optimal process conditions in order to minimize device sensitivities. In this paper, we used one-dimensional process simulator, SUPREM-Ⅱ, and two-dimensional device simulator, MINIMOS 4.0 in order to extract optimal process parameter which can minimize changes of the device characteristics caused by process parameter variation in the case of short channel nMOSFET and pMOSFET device. From this simulation, we have derived the dependence relationship between process parameters and device characteristics. Here, we have presented a method to extract process parameters from design trend curve(DTC)obtained by process and device simulations.
연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
