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열처리 조건에 따른 SrS:Cu,F TFEL 소자의 발광특성의 변화
조황신,송상근,김훈,양해석 중앙대학교 기초과학연구소 2000 基礎科學硏究所 論文集 Vol.14 No.-
SrS:Cu,F thin film electroluminescent (TFEL) devices, with a typical double-insulating-layer structure, is fabricated by E-beam deposition method. In order to improve the luminescent characteristics, various post-deposition annealing of the TFEL devices are attempted in electric furnace at 700℃ for 30 minutes. EL emission spectra of SrS:Cu,F TFEL devices show a major peak centered around 454nm∼474nm, having longer wavelength for increased CuF₂ concentrations. The emission corresponds to the 3d^(9)4S->3d^(10) electronic transition of Cu^+ ions. The maximum brightness of 213 cd/㎡ and the best efficiency of 0.19 lm/W are achieved for SrS:Cu,F TFEL devices with the post posphor-layer-deposition annealing in air.