http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
유수민(Soo-Min Yoo),백수웅(Soo-Woong Back),임정민(Jung-Min Lim),문채주(Chae-Joo Moon) 한국전자통신학회 2023 한국전자통신학회 논문지 Vol.18 No.2
소규모 기업이 산재한 산업단지는 에너지 관리시스템을 구현하기가 쉽지 않아 에너지관련 데이터를 수집하여 조정하는 방법을 주로 사용한다. FEMS는 수동적 에너지 관리 방식에서 IoT와 ICT를 활용하는 능동적 에너지 관리 방식으로의 패러다임 변화 요구에 대응하는 시스템이다. 본 연구에서는 화학산업단지에 소재하고 있는 중소기업을 대상으로 공장에너지 관리시스템을 설계한다. 각 기업에 구축된 설비의 전력에너지를 대상으로 FEMS를 통하여 에너지를 절감하는 방안과 효율을 검토하여 효율성을 확인하였다. FEMS의 비용 효과성은 수용 기업의 업무 프로세스 내에서 책임과 권한이 부여된 인력에 의해 활용될 때 창출된다. 따라서 기업의 조직과 에너지경영 목표 달성을 위한 에너지 경영 시스템의 기획, 지원, 운영 및 평가, 그리고 지속적 개선에 적용할 수 있는 EMS를 활용하는 것이 필요하다. It is not easy to implement an energy management system in an industrial complex where small businesses are scattered, so the method of collecting and adjusting energy-related data is mainly used. FEMS is a system that responds to the demand for a paradigm shift from a passive energy management method to an active energy management method using IoT and ICT. In this study, a factory energy management system(FEMS) is designed for small and medium-sized enterprises located in chemical industrial complexes. Efficiency was confirmed by reviewing energy saving measures and efficiencies through FEMS for the electric energy of facilities built in each company. The cost effectiveness of FEMS is created when it is utilized by responsible and empowered personnel within the business processes of the host company. Therefore, it is necessary to utilize EMS that can be applied to the planning, support, operation and evaluation, and continuous improvement of the energy management system to achieve corporate organization and energy management goals.
양현훈(Yang, Hyeon-Hun),백수웅(Back, Su-Ung),김한울(Kim, Han-Wool),한창준(Han, Chang-Jun),이석호(Lee, Suk-Ho),정운조(Jeong, Woon-Jo),박계춘(Park, Gye-Choon),이진(Lee, Jin),정해덕(Chung, Hae-Deok) 한국신재생에너지학회 2010 한국신재생에너지학회 학술대회논문집 Vol.2010 No.06
CuInS₂ thin films were synthesized by sulfurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furnace annealing at temperature 200[?C]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor CuInS₂ thin films with non-stoichiometry composition. CuInS₂ thin film was well made at the heat treatment 200[?C] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was 9.10568{times}10^{17} [cm^{-3}], 312.502 [cm²/V{cdot}s] and 2.36{times}10^{-2} [{Omega}{cdot}cm], respectively.
진공 석영관에서 Selenization한 CuInSe₂ 박막 특성분석
양현훈(Yang, Hyeon-Hun),백수웅(Back, Su-Ung),김한울(Kim, Han-Wool),한창준(Han, Chang-Jun),나길주(Na, Kil-Ju),김영준(Kim, Young Jun),소순열(So, Soon-Youl),박계춘(Park, Gye-Choon),이진(Lee, Jin),정해덕(Chung, Hae-Deok) 한국신재생에너지학회 2010 한국신재생에너지학회 학술대회논문집 Vol.2010 No.06
본 실험에서는 CuInSe₂ 3원물질을 화학량론적 조성비가 되도록 박막을 제조하기 위해 각 단위원소를 원자비에 맞춰 전자선가열 진공증착기를 사용하여 Cu, In, Se 순으로 증착하였다. 90?C이하의 온도에서 CuIn₂, In상이 주를 이루며, 100?C이상에서는 Cu_{11}In_9상이 나타나기 시작하고 In상이 증가하였다. 10^{-3}torr이상의 진공석영관에서 열처리와 동시에 Selenization을 통해 제작된 CuInSe₂박막은 열처리온도 250?C에서는 CuxSe, CuSe등의 2차상들이 나타나다가 450?C이상의 고온에서 CuInSe₂ 단일상을 형성하였다. 이로부터 진공중에서 반응을 시켰을 때, 더 낮은 온도에서 반응이 일어나고 열역학적으로 보다 안정한 소수의 화합물들이 쉽게 형성됨을 확인할 수 있었다. 특히 250?C에서는 Sphalerite 구조를 가지다가 350?C이상의 온도에서 Selenization하였을 때 Chalcopyrite 구조를 가졌다. 박막이 두꺼워지면서 결정립의 크기가 커지고 응력이 작아지는 특성을 보였다. 에너지 밴드갭은(E_g)은 Cu/In 성분비율이 클수록 작은값을 보였으며, 결절립크기가 증대되므로 결국 흡수계수가 낮아짐을 알 수 있다. 또한 두께가 증가할수록 전반적으로 흡수계수가 증가하였고 Cu/In의 성분비율이 0.97일 때 기초흡수파장은 1,169nm이고 에너지밴드갭은 1.06eV이었으며, 두께 1.5{mu}m이상일 때 전반적으로 양호한 상태의 p-type CuInSe₂박막을 제작하였다.
A Study on Properites of PV Solar cell n-type ZnS Using RF Sputtering Method
양현훈(Yang, Hyeon-Hun),김한울(Kim, Han-Wool),한창준(Han, Chang-Jun),소순열(So, Soon-Youl),박계춘(Park, Gye-Choon),이진(Lee, Jin),정해덕(Chung, Hea-Deok),이석호(Lee, Suk-Ho),백수웅(Back, Su-Ung),나길주(Na, Kil-Ju),정운조(Jeong, Woon 한국신재생에너지학회 2011 한국신재생에너지학회 학술대회논문집 Vol.2011 No.05
ZnS thin films were deposited with the radio frequency magnetron sputtering technique at various temperatures and sputtering powers. With the increase in the deposition temperature and the decrease in the radio frequency sputtering power, the crystallinity was increased and the surface roughness was decreased, which lead to the decrease in the electrical resistivity of the film. It is also clearly observed that, the intensity of the (111) XRD peak increases with increasing the substrate temperature. On the other hand, as seen in the FWHM decreased with increasing the substrate temperature. Since the FWHM of the (111) diffraction peak is inversely properties to the grain size of the film, then grain size of ZnS thin film increases with increasing the substrate temperature. The electrical resistivity and optical transmittance of the ZnS film as a function of the post-annealing temperature. It can be seen that with the annealing temperature set at 400?C, the resistivity decreases to a minimum value of 2.1{times}10^{-3};{Omega}cm and the transmittance increases to a maximum value of 80% of the ZnS film.
A Study on Properites of PV Solar cell AZO thin films post-annealing by RTP technique
양현훈(Yang, Hyeon-Hun),김한울(Kim, Han-Wool),한창준(Han, Chang-Jun),소순열(So, Soon-Youl),박계춘(Park, Gye-Choon),이진(Lee, Jin),정해덕(Chung, Hea-Deok),이석호(Lee, Suk-Ho),백수웅(Back, Su-Ung),나길주(Na, Kil-Ju),정운조(Jeong, Woon 한국신재생에너지학회 2011 한국신재생에너지학회 학술대회논문집 Vol.2011 No.05
In this paper, ZnO:Al thin films with c-axis preferred orientation were prepared on Soda lime glass substrates by RF magnetron sputtering technique. AZO thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and substrate temperature conditions variously, structural and electrical characteristics were measured. For the manufacture of the AZO were vapor-deposited in the named order. It is well-known that post-annealing is an important method to improve crystal quality. For the annealing process, the dislocation nd other defects arise in the material and adsorption/decomposition occurs. The XRD patterns of the AZO films deposited with grey theory prediction design, annealed in a vacuum ambient(2.0{times}10-3Torr)at temperatures of 200, 300, 400 and 500?C for a period of 30min. The diffraction patterns of all the films show the AZO films had a hexagonal wurtzite structure with a preferential orientation along the c-axis perpendicular to the substrate surface. As can be seen, the (002)peak intensities of the AZO films became more intense and sharper when the annealing temperature increased. On the other hand, When the annealing temperature was 500?C the peak intensity decreased. The surface morphologies and surface toughness of films were examined by atomic force microscopy(AFM, XE-100, PSIA). Electrical resistivity, Gall mobility and carrier concentration were measured by Hall effect measuring system (HL5500PC, Accent optical Technology, USA). The optical absorption spectra of films in the ultraviolet-visibleinfrared( UV-Vis-IR) region were recorder by the UV spectrophotometer(U-3501, Hitachi, Japan). The resistivity, carrier concentration, and Hall mobility of ZnS deposited on glass substrate as a function of post-annealing.