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Cu-Phthalocyanine 유기장벽 두께에 따른 스핀소자의 전기적 특성 변화 양상
배유정(Yu Jeong Bae,),이년종(Nyun Jong Lee),김태희(Tae Hee Kim) 한국자기학회 2012 韓國磁氣學會誌 Vol.22 No.5
V-I characteristics of Fe(100)/MgO(100)/Cu-phthalocyanine (CuPc)/Co hybrid magnetic tunnel junctions were investigated at different temperatures. Fe(100) and Co ferromagnetic layers were separated by an organic-inorganic hybrid barrier consisting of different thickness of CuPc thin film grown on a 2 nm thick epitaxial MgO(100) layer. As the CuPc thickness increases from 0 to 10 nm, a bistable switching behavior due to strong charging effects was observed, while a very large magenetoresistance was shown at 77 K for the junctions without the CuPc barrier. This switching behavior decreases with the increase in temperature, and finally disappears beyond 240 K. In this work, high-potential future applications of the MgO(100)/CuPc bilayer were discussed for hybrid spintronic devices as well as polymer random access memories (PoRAMs).
Fe\MgO\Cu-Phthalocyanine 복합구조 계면구조와 그 전자기적 특성
배유정(Yu Jeong Bae),이년종(Nyun Jong Lee),김태희(Tae Hee Kim),Andrew Pratt 한국자기학회 2013 韓國磁氣學會誌 Vol.23 No.6
The influence of insertion of an ultra-thin Cu-Phthalocyanine (CuPc) between MgO barrier and ferromagnetic layer in magnetic tunnel juctions (MTJs) was investigated. In order to understand the relation between the electronic and structural properties of Fe\MgO\CuPc, the surface (or interface) analysis was carried out systematically by using spin polarized metastable He de-excited spectroscopy for the CuPc films grown on the Si(001)\5 nm MgO(001)\7 nm Fe(001)\1.6 nm MgO(001) multilayer structure as the thickness of CuPc increases from 0 to 5 nm. In particular, for the 1.6 nm CuPc surface, a rather strong spin asymmetry between upand down-spin band appears while it becomes weaker or disappears for the CuPc films thinner or thicker than ~1.6 nm. Our results emphasize the importance of the interfacial electronic properties of organic layers in the spin transport of the hybrid MTJs.
RF-스퍼터링 기법으로 제작한 Fe<SUB>3</SUB>O<SUB>4</SUB> 박막에 Ta 기저층이 미치는 효과
국지현(Jihyeon Gook),이년종(Nyun Jong Lee),배유정(Yu Jeong Bae),김태희(Tae Hee Kim) 한국자기학회 2015 韓國磁氣學會誌 Vol.25 No.2
Si(100)\200 nm SiO<SUB>2</SUB>\5 nm Ta\5 nm MgO\35 nm Fe<SUB>3</SUB>O<SUB>4</SUB> multi-layers were prepared by using RF-sputtering and ultra-high vacuum molecular beam epitaxy (UHV-MBE) techniques. After post-annealing the multi-layers at 500℃ for 1 hour under the high vacuum of~1 × 10<SUP>?6</SUP> Torr, we observed ferromagnetic properties at room temperature as well as the Verwey transition which is the typical features of magnetite crystals formed. We have carried out a comparative study of the effect of Ta buffered layer on the crystallinity and magnetic properties of Fe<SUB>3</SUB>O<SUB>4</SUB> thin films prepared under different growth and annealing conditions.