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RF-스퍼터링 기법으로 제작한 Fe<SUB>3</SUB>O<SUB>4</SUB> 박막에 Ta 기저층이 미치는 효과
국지현(Jihyeon Gook),이년종(Nyun Jong Lee),배유정(Yu Jeong Bae),김태희(Tae Hee Kim) 한국자기학회 2015 韓國磁氣學會誌 Vol.25 No.2
Si(100)\200 nm SiO<SUB>2</SUB>\5 nm Ta\5 nm MgO\35 nm Fe<SUB>3</SUB>O<SUB>4</SUB> multi-layers were prepared by using RF-sputtering and ultra-high vacuum molecular beam epitaxy (UHV-MBE) techniques. After post-annealing the multi-layers at 500℃ for 1 hour under the high vacuum of~1 × 10<SUP>?6</SUP> Torr, we observed ferromagnetic properties at room temperature as well as the Verwey transition which is the typical features of magnetite crystals formed. We have carried out a comparative study of the effect of Ta buffered layer on the crystallinity and magnetic properties of Fe<SUB>3</SUB>O<SUB>4</SUB> thin films prepared under different growth and annealing conditions.