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CMOS 호환 가능한 Si₃N₄ 기반 저항 변화 메모리의 점진적 저항 변화 특성 분석
김민휘(Min-Hwi Kim),김성준(Sungjun Kim),방수현(Suhyun Bang),김태현(Tae-Hyeon Kim),이동근(Dong Keun Lee),조성재(Seongjae Cho),박병국(Byung-Gook Park) 대한전자공학회 2016 대한전자공학회 학술대회 Vol.2016 No.6
In this work, we investigated gradual resistance switching operation of our fabricated silicon nitride-based bipolar RRAM. The phenomenon is considered to occur by insertion of additional SiO2 layer between Si3N4 switching layer and Si bottom electrode. In pulse operation, the effect of pulse condition such as pulse width, rise/fall time and paek voltage on gradual switching characteristics is investigated thoroughly.
Si₃N₄ 및 SiO₂ 이중층 절연막 기반 저항 변화 메모리 구동에 compliance 전류가 미치는 영향
이동근(Dong Keun Lee),김성준(Sungjun Kim),김민휘(Min-Hwi Kim),방수현(Suhyun Bang),김태현(Tae-Hyeon Kim),박병국(Byung-Gook Park) 대한전자공학회 2016 대한전자공학회 학술대회 Vol.2016 No.11
Resistive switching memories are recommended to be operated under low switching current for low-power operation. In this paper, influence of compliance current (Icomp) on fabricated resistive switching memory has been observed under DC operation. Reset current (IRESET) has been shown to increase with the rise of compliance current. By limiting the range of compliance current within 100μA, relationship of ILRS and IHRS to Icomp has been investigated. Also, on/off ratio has been observed to increase with higher value of Icomp valued within 100μA.