http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
p-Si 기판에 성장한 BaTiO<sub>3</sub> 박막의 어닐링온도와 구조적 특성과의 관계
민기득,김동진,이종원,박인용,김규진,Min, Ki-Deuk,Kim, Dong-Jin,Lee, Jong-Won,Park, In-Yong,Kim, Kyu-Jin 한국재료학회 2008 한국재료학회지 Vol.18 No.4
In this study, $BaTiO_3$ thin films were grown by RF-magnetron sputtering, and the effects of a post-annealing process on the structural characteristics of the $BaTiO_3$ thin films were investigated. For the crystallization of the grown thin films, post-annealing was carried out in air at an annealing temperature that varied from $500-1000^{\circ}C$. XRD results showed that the highest crystal quality was obtained from the samples annealed at $600-700^{\circ}C$. From the SEM analysis, no crystal grains were observed after annealing at temperatures ranging from 500 to $600^{\circ}C$; and 80 nm grains were obtained at $700^{\circ}C$. The surface roughness of the $BaTiO_3$ thin films from AFM measurements and the crystal quality from Raman analysis also showed that the optimum annealing temperature was $700^{\circ}C$. XPS results demonstrated that the binding energy of each element of the thin-film-type $BaTiO_3$ in this study shifted with the annealing temperature. Additionally, a Ti-rich phenomenon was observed for samples annealed at $1000^{\circ}C$. Depth-profiling analysis through a GDS (glow discharge spectrometer) showed that a stoichiometric composition could be obtained when the annealing temperature was in the range of 500 to $700^{\circ}C$. All of the results obtained in this study clearly demonstrate that an annealing temperature of $700^{\circ}C$ results in optimal structural properties of $BaTiO_3$ thin films in terms of their crystal quality, surface roughness, and composition.
p-Si 기판에 성장한 BaTiO<sub>3</sub> 박막의 두께와 구조적 특성과의 관계
민기득,이종원,김선진,Min, Ki-Deuk,Lee, Jongwon,Kim, Seon-Jin 한국재료학회 2013 한국재료학회지 Vol.23 No.6
In this study, $BaTiO_3$ thin films were grown by RF-magnetron sputtering, and the effects of the thin film thickness on the structural characteristics of $BaTiO_3$ thin films were systematically investigated. Instead of the oxide substrates generally used for the growth of $BaTiO_3$ thin films, p-Si substrates which are widely used in the current semiconductor processing, were used in this study in order to pursue high efficiency in device integration processing. For the crystallization of the grown thin films, annealing was carried out in air, and the annealing temperature was varied from $700^{\circ}C$. The changed thickness was within 200 nm~1200 nm. The XRD results showed that the best crystal quality was obtained for ample thicknesses 700 nm~1200 nm. The SEM analysis revealed that Si/$BaTiO_3$ are good quality interface characteristics within 300 nm when observed thickness. And surface roughness observed of $BaTiO_3$ thin films from AFM measurement are good quality surface characteristics within 300 nm. Depth-profiling analysis through GDS (glow discharge spectrometer) showed that the stoichiometric composition could be maintained. The results obtained in this study clearly revealed $BaTiO_3$ thin films grown on a p-Si substrate such as thin film thickness. The optimum thickness was 300 nm, the thin film was found to have the characteristics of thin film with good electrical properties.
모사원전환경에서 오스테나이트 스테인리스강의 피로균열성장 평가
민기득,이봉상,김선진,Min, Ki-Deuk,Lee, Bong-Sang,Kim, Seon-Jin 한국재료학회 2015 한국재료학회지 Vol.25 No.4
Fatigue crack growth rate tests were conducted as a function of temperature, dissolved hydrogen (DH) level, and frequency in a simulated PWR environment. Fatigue crack growth rates increased slightly with increasing temperature in air. However, the fatigue crack growth rate did not change with increasing temperature in PWR water conditions. The DH levels did not affect the measured crack growth rate under the given test conditions. At $316^{\circ}C$, oxides were observed on the fatigue crack surface, where the size of the oxide particles was about $0.2{\mu}m$ at 5 ppb. Fatigue crack growth rate increased slightly with decreasing frequency within the frequency range of 0.1 Hz and 10 Hz in PWR water conditions; however, crack growth rate increased considerably at 0.01 Hz. The decrease of the fatigue crack growth rate in PWR water condition is attributed to crack closure resulting from the formation of oxides near the crack tips at a rather fast loading frequency of 10 Hz.