http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Ni 박막 위치에 따른 GZO 투명전도막의 전기광학적 물성 변화
문현주 ( Hyun Joo Mun ),전재현 ( Jae Hyun Jeon ),공태경 ( Tae Kyung Gong ),서기웅 ( Ki Woong Seo ),오정현 ( Jeong Hyun Oh ),김선경 ( Sun Kyung Kim ),최동혁 ( Dong Hyuk Choi ),손동일 ( Dong Il Son ),김대일 ( Daeil Kim ) 한국열처리공학회 2015 熱處理工學會誌 Vol.28 No.3
GZO single layer, Ni buffered GZO(GZO/Ni), Ni intermediated GZO (GZO/Ni/GZO) and Ni capped GZO (Ni/GZO) films were prepared on poly-carbonate (PC) substrates by RF and DC magnetron sputtering without intentional substrate heating and then the influence of the Ni (2 nm thick) thin film on the optical, electrical and structural properties of GZO films were investigated. As deposited GZO single layer films show the optical transmittance of 81.3% in the visible wavelength region and a resistivity of 1.0 × 10(-2) Ωcm, while GZO/Ni/GZO trilayer films show a lower resistivity of 6.4 × 10(-4) Ωcm and an optical transmittance of 74.5% in this study. Based on the figure of merit, it can be concluded that the intermediated Ni thin film effectively enhances the opto-electrical performance of GZO films for use as transparent conducting oxides in flexible display applications.(Received April 2, 2015; Revised April 13, 2015; Accepted April 17, 2015)