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Morphological Effects Boosting Light Extraction from Highly-absorptive Light-emitting Structures
이후철,나진영,문윤종,김선경 한국물리학회 2015 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.66 No.6
We studied morphological designs for enhanced light extraction from deep-ultraviolet AlGaNflip-chip light-emitting diodes with an absorptive p-type GaN layer. Ray tracing simulations wereperformed to investigate the dependence of the extraction efficiency on the thickness of the sapphiresubstrate, the diameter of mesa columns within arrays, and the refractive index of the cladding layerbetween the multiple quantum wells and the p-type GaN. The extraction efficiency was significantlyimproved, compared with reference structure, by tailoring each morphological design. This was dueto a reduced interaction between the light and the absorptive p-type GaN, which increased theemission through the sapphire and the AlGaN sides.
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Design of near-unity transmittance dielectric/Ag/ITO electrodes for GaN-based light-emitting diodes
이한결,나진영,문윤종,성태연,김선경 한국물리학회 2015 Current Applied Physics Vol.15 No.7
We designed a near-unity transmittance dielectric/Ag/ITO electrode for high-efficiency GaN-based lightemitting diodes by using the scattering matrix method. The transmittance of an ultrathin metal layer, sandwiched between a dielectric layer and an ITO layer, was investigated as a function of the thickness and the optical constant of each constituent layer. Three different metals (Ag, Au, and Al) were examined as the metal layer. The analytical simulation indicated that the transmittance of a dielectric/metal/ITO multilayer film is maximized with an approximately 10-nm-thick Ag layer. Additionally, the transmittance also tends to increase as the refractive index of the upper dielectric layer increases. By tailoring the thickness of the dielectric layer and the ITO layer, the dielectric/Ag/ITO structure yielded a transmittance of 0.97, which surpasses the maximum transmittance (0.91) of a single ITO film. Furthermore, this extraordinary transmittance was present for other visible wavelengths of light, including violet and green colors. A complex phasor diagram model confirmed that the transmittance of the dielectric/metal/ ITO multilayer film is influenced by the interference of reflected partial waves. These numerical findings underpin a rational design principle for metal-based multilayer films that are utilized as transparent electrodes for the development of efficient light-emitting diodes and solar cell devices.
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