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Interface Analysis of an AlGaAs Multilayer System by Using Spectroscopic Ellipsometry
공태호,김영동,데이비드에스프네스,D. S. Ko,J. Coleman,M. V. Klein,V. Elarde,김영운 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.6
We investigate the validity of the alloy interface model that we recently developed for the analysis of interfaces from ellipsometric data, which is an analysis where the eective medium approximation (EMA) has traditionally been used. For this purpose, an AlGaAs multilayer system was grown as a typical example, and its room-temperature dielectric function was measured by using variable angle spectroscopic ellipsometry (SE). To critically assess our results, we also measured the sample by using transmission electron microscopy to verify the sharpness of its interfaces and to determine its layer thicknesses independently.
B. Gokce,K. Gundogdu,데이비드에스프네스 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.60 No.10
We discuss recent results regarding the effects of strain, carrier type and concentration on the oxidation of H-terminated (111)Si. Second-harmonic-generation data show that this is a two-stage process where the H of the “up” bonds of the outermost Si layer is replaced by OH, followed by O insertion into the “back” bonds. These data provide additional detailed information about both stages. In particular, directional control of the in-plane surface chemistry by using the applied uniaxial stress provides new opportunities for interface control.
Optical Properties of InGaAs Alloy Films in the E2 Region by Spectroscopic Ellipsometry
영동 김,B. H. Koo,데이비드에스프네스,S. J. Kim,T. Yao,T. H. Ghong,Y. S. Ihn 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.III
We report pseudodielectric functions $<\epsilon>$ of In$_x$Ga$_{1-x}$As alloy films for several In composition $x$ from 0.00 to 0.66. Films were grown on (110) InP substrates by solid-source molecular beam epitaxy. We used chemical etching to remove overlayers and thereby to obtain the best approximation to the bulk dielectric responses $\epsilon$ of the films. The dependences of the ${E_0}'$, ${E_0}'$+$\Delta_0 '$, and $E_2$ critical point point energies on $x$ were obtained by analysis of second energy derivatives of the $<\epsilon>$ spectra.
Back-reflection Second-harmonic Generation of (111)Si: Theory and Experiment
B. Gokce,K. Gundogdu,E. J. Adles,데이비드에스프네스 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.58 No.51
We consider second-harmonic generation (SHG) from a (111) surface of a tetrahedrally bonded semiconductor illuminated at normal incidence by a focused pump beam of Gaussian cross section as a model of SHG by focused beams. Calculations are done in the anisotropic bond model (ABM) and the results are applied to Si. The unit-cell configuration is simple enough for the calculations to be done analytically, so the results can be compared directly to similar calculations done for amorphous material. Although the differences in unit-cell symmetry occur on the atomic scale, they lead to large differences in the spatial distribution of the emerging radiation. Lateral focusing, which might be expected to increase the bulk contribution to SHG by increasing the lateral field gradient, has little effect; the spatial-dispersion contribution remains dominated by the phase term. Focusing does not inhibit backscattered SHG from the bulk, although our data on the oxidation of H-terminated (111)Si clearly show that in some cases the interface contribution dominates by a wide margin.
Study of the Dielectric Function of ZnS by Spectroscopic Ellipsometry
T. H. Ghong,김태중,김영동,S. J. Kim,데이비드에스프네스,Y. D. Choi,Y-. M. Yu 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.III
We report the best room-temperature dielectric function data for zincblende-type ZnS from 3.7 to 6.0 eV, obtained by spectroscopic ellipsometry together with real-time assessment of overlayer removal. These data were extended to 9.0 eV (without chemical etching) using a variable-angle system. This permits the first detailed analysis of the $E_2$ band gap of ZnS, revealing 3 bandgaps in this spectral region
Roughness Analysis of the Critical Dimension by Using Spectroscopic Ellipsometry
T. H. Ghong,S.-H. Han,,J.-M. Chung,J.-M. Chung,Y. D. Kim,데이비드에스프네스 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.58 No.51
In semiconductor electronics applications, observation of the linewidth roughness (LWR) or the critical dimension roughness will become increasingly important. In this article, we study to analyze the roughness of a grating structure by using spectroscopic ellipsometry. A simple 1D patterned c-Si grating structure was measured from the zeroth-order diffraction response at a fixed angle of incidence, which result agreed with a theoretical prediction made by using a rigorous coupled-wave analysis (RCWA) calculation with an effective-medium approximation (EMA) for a structure with roughness.